Showing papers on "Chromium(III) oxide published in 1985"
TL;DR: In this article, the character of the electronic charge carriers under various conditions in chromium (III) oxide was investigated using Seebeck measurements on sintered compacts of in the temperature range 800-1800 K. The compacts were prepared by various sintering procedures.
Abstract: The character of the electronic charge carriers under various conditions in chromium (III) oxide was investigated using Seebeck measurements on sintered compacts of in the temperature range 800–1800 K. The compacts were prepared by various sintering procedures. Depending on the pretreatment of the compacts, n‐ or p‐type materials were obtained. p‐Type material resulted after sintering in an atmosphere with a high oxygen partial pressure. Sintering in an atmosphere with low oxygen partial pressure, however gave n‐type material. This n‐type behavior could be frozen in by cooling the compacts below 1100 K. These experimental results provide evidence for Cr interstitials being the predominating point defects in at low oxygen partial pressure.
16 citations
Patent•
21 Oct 1985TL;DR: Novel anion exchange resin composites having hydrous chromium III oxide (Cr2 O3.nH2 O) incorporated therein are useful in removing a wide array of polyvalent metal cations from aqueous solution as discussed by the authors.
Abstract: Novel anion exchange resin composites having hydrous chromium III oxide (Cr2 O3.nH2 O) incorporated therein are useful in removing a wide array of polyvalent metal cations from aqueous solution.
8 citations
TL;DR: In this article, the character of the electronic charge carriers under various conditions in chromium (III) oxide was investigated using Seebeck measurements on sintered compacts of in the temperature range 800-1800 K. The compacts were prepared by various sintering procedures.
Abstract: The character of the electronic charge carriers under various conditions in chromium (III) oxide was investigated using Seebeck measurements on sintered compacts of in the temperature range 800–1800 K. The compacts were prepared by various sintering procedures. Depending on the pretreatment of the compacts, n‐ or p‐type materials were obtained. p‐Type material resulted after sintering in an atmosphere with a high oxygen partial pressure. Sintering in an atmosphere with low oxygen partial pressure, however gave n‐type material. This n‐type behavior could be frozen in by cooling the compacts below 1100 K. These experimental results provide evidence for Cr interstitials being the predominating point defects in at low oxygen partial pressure.