Showing papers on "IMPATT diode published in 2018"
Patent•
23 Nov 2018
TL;DR: In this paper, a method for evaluating the performance of an impact avalanche transit time (IMPATT) diode with an SiC homogeneous heterojunction is presented. But the method comprises the steps of determininga structure of the IMTFTT diode, and establishing relations between the thicknesses of N and P regions of the IMPFTT diodes and a working frequency fd; on the basis, establishing a Poisson equation, acontinuity equation and a current density equation considering a tunneling effect of the homogeneous homojunction, thereby
Abstract: The invention provides a method for evaluating the performance of an impact avalanche transit time (IMPATT) diode with an SiC homogeneous heterojunction. The method comprises the steps of determininga structure of the IMTFTT diode, and establishing relations between the thicknesses of N and P regions of the IMPFTT diode and a working frequency fd; on the basis, establishing a Poisson equation, acontinuity equation and a current density equation considering a tunneling effect of the homogeneous heterojunction, thereby forming an equation set; and obtaining boundary conditions of the IMPFTT diode, performing iterative solving on the equation set by utilizing a double-iterative simulation technology based on a one-dimensional finite difference method, and calculating out values of performance parameters such as a breakdown voltage, an avalanche voltage, a voltage of a drift region, direct current-alternating current power conversion efficiency, conductivity, conductance, susceptance andthe like. By implementing the method, the performance of a mixed tunneling avalanche transit time (MITATT) diode with the SiC homogeneous heterojunction is considered; and the difference between theperformances of the IMPATT and MITATT diodes is compared, so that the stability of the diode can be judged.
2 citations
01 Jan 2018
TL;DR: In this article, the authors studied the problem of control of a chaotic generator based on microwave diodes and showed that the frequency response characteristic of inertial feedback provides a wide range of possibilities for controlling the chaotic oscillation spectrum in microwave diode oscillators.
Abstract: Microwave chaotic signals arouse interest in a wide range of applied radio engineering problems such as ultra-wideband wireless telecommunication systems, high precision short-range radiolocation and microwave visualization, radar countermeasures and radio suppression. For design of the chaotic oscillators in a bandwidth up to hundreds of gigahertz could be used avalanche transit time diodes. But the problem of control of chaotic generator based on microwave diodes is not studied properly. In this paper discusses methods of forming a given power spectrum envelope of the output chaotic oscillations of generator based on avalanche transit time diode. The results of numerical simulation and experimental study of the microwave chaotic oscillator based on the IMPATT diode are presented. It is shown that control of the frequency response characteristic of inertial feedback provides a wide range of possibilities for controlling the envelope of the chaotic oscillation spectrum in microwave diode oscillators.