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Showing papers on "Mask inspection published in 1987"


Proceedings ArticleDOI
Katsumi Suzuki1
30 Jun 1987
TL;DR: In this article, a novel X-ray mask fabrication process, which is as simple as that used for conventional photomasks, has been developed, and masks with SIN, membranes which are stretched over rectangular rigid Si-frames, are fabricated from the same large wafer.
Abstract: A novel X-ray mask fabrication process, which is as simple as that used for conventional photomasks, has been developed. Several step and repeat X-ray lithography masks with SIN, membranes, which are stretched over rectangular rigid Si-frames, are fabricated from the same large wafer. Transparent window formations fot several tens of X-ray mask substrates are carried out simultaneously, by etching the (100) oriented Si wafers in KOH solution using no protection. V-grooves with (111) plane side walls, for dividing individual wafers into individual X-ray mask substrates, are simultaneously formed by the unisotropic etching. X-ray absorber patterns are fabricated on the SiNv membrane with rf-sputtered tungsten, by the subtractive method. Employing the present method, SIN, mask blanks, with less than 0.3μm warpage across a 26mm square window, have been fabricat&I with several tens of times higher throughput than can be achieved by the conventional process.

5 citations


Proceedings ArticleDOI
30 Jun 1987
TL;DR: In this article, the characteristics of a photomask repaired with a focused ion beam (FIB) are described, while the edge roughness is almost negligible for both clear and opaque repairs.
Abstract: The characteristics of a photomask repaired with a focused ion beam (FIB) are described. The edge-placement accuracy of the repair is +0.1 um, while the edge roughness is almost negligible for both clear and opaque repairs. Less than 3% of the repair sites are captured on an automatic photomask inspection system. Correlation between linewidth measurements on the photomask and wafers printed on a projection aligner show that variations of the line-edge are well within the +0.1 um placement accuracy of the FIB repair system. This means that truly zero-defect plates are possible with repair CD's the same as the lithography CD's.

3 citations


Patent
04 Jul 1987
TL;DR: In this paper, a photomask inspecting device is composed of an inspection system and data system, which consists of a controller, inspection machine, and VDT (video display terminal) and the data base system is constituted of a computer 4, design and specification data base 5, inspection data base 6, VDT7 and printer 8.
Abstract: PURPOSE:To improve the reliability of photomask inspection and make the inspecting work and analysis of inspection data quicker, by integratedly collecting design and specification data which become necessary at the time of photomask inspection and inspection data obtained at the time of inspection in a data base and providing software which puts inspection data to practical use. CONSTITUTION:This photomask inspecting device is composed of an inspection system and data system. The inspection system is constituted of a controller 1, inspection machine 2, and VDT (video display terminal) 3 and the data base system is constituted of a computer 4, design and specification data base 5, inspection data base 6, VDT7 and printer 8. When inspection of a photomask by the inspection machine 2 is completed, the inspection data are written in the inspection data base 6 by the software of the computer 4 through the controller 1 and a signal line P. Since inspection data are accumulated in the inspection data base 6, processed results of inspection data, such as totalized tables, graphs, tables, list of history of products, etc., can be outputted to the VDT7 and printer 8 when the software of the computer 4 is designated from the VDT7.

1 citations


Patent
18 May 1987
TL;DR: A mask inspection device for inspecting features above a given size on an image defining mask (14) used in a semiconductor fabrication imaging system (10) is described in this paper.
Abstract: A mask inspection device (20) for inspecting features above a given size on an image defining mask (14) used in a semiconductor fabrication imaging system (10), the mask inspection device (20) being a substrate having an array (44) of energy responsice devices (46) thereon; an array (52) of energy transmissive openings (54), each of which openings (54) corresponds to and is aligned with one of the energy responsive devices (46) and has a size related to the given size, the array (52) of openings (54) being positioned remote from the energy responsive devices (46) such that any energy applied through a said opening (54) is applied to the energy responsive device (46) corresponding to that opening (54); and means (26,28,30,32) for providing data manifesting the changed condition of the energy responsive devices (46) to comparing means (34) for a determination of the mask (14) features. A comparison can be made against data previously obtained from a known good mask and a determination can be made whether the mask under test is acceptable or flawed.