Showing papers on "Mobility model published in 1970"
TL;DR: In this paper, a drain-field dependent mobility model and a constant mobility model were compared with experimental results obtained from it, and the variable mobility model was shown to be in much better agreement with experiment.
Abstract: The characteristics of a depletion type N-channel MOS transistor, with a built-in inversion layer, show considerable deviation from the behaviour expected of a device with a constant effective mobility along its channel. Experiment indicates reduction of the mobility in the direction of the drain due to the action of the drain induced field. A functional dependence of mobility on this field leading to a constant velocity is assumed and a set of equations describing this method is derived for various ranges of drain voltage. A special device, with voltage probes situated along its channel, was constructed and the drain characteristics, saturation point and potential distribution along the channel for the drain-field dependent mobility model and the constant mobility model were compared with experimental results obtained from it. The variable mobility model was shown to be in much better agreement with experiment.
4 citations