Showing papers on "Nanowire published in 1899"
31 Dec 1899
TL;DR: In this paper, a two-step combination method was proposed for the fabrication and optimization of ZnO nanowire arrays for electrochemical glucose biosensor fabrication, where radiofrequency (RF) sputtering of the seeding layer and hydrothermal growth of the nanowires in a solution containing zinc nitrate hexahydrate were performed.
Abstract: The current paper is devoted to the fabrication and optimisation of ZnO nanowire (ZnONW) arrays for electrochemical glucose biosensor fabrication. The ZnO nanowires were fabricated by a two-step combination method. This includes radio-frequency (RF) sputtering of the ZnO seeding layer and hydrothermal growth of the nanowires in a solution containing zinc nitrate hexahydrate.
Glucose oxidase has been immobilised on the nanowires, for use as the biorecognition molecule. The sensing characteristics of the biosensors based on this fabrication methodology were investigated in phosphate buffer solution using electrochemical techniques.
4 citations
31 Dec 1899
TL;DR: A survey of polarization-dependent optical phenomena in semiconductor and metal nanowires and nanorods is presented in this paper, where the amplitude of the optical electric field inside the former depends drastically on the angle between the direction of light polarization and the nanostructure axis.
Abstract: A survey of polarization-dependent optical phenomena in semiconductor and metal nanowires and nanorods is presented. Due to a large dielectric constant mismatch between nanostructures and their environment, the amplitude of the optical electric field inside the former depends drastically on the angle between the direction of light polarization and the nanostructure axis. As a result, optical absorption, photoconductivity, and nonlinear photoresponse in semiconductor structures are strongly anisotropic, with the maximal value for the parallel light polarization. In metal structures, absorption anisotropy depends on the light frequency, and for that close to the transverse plasmon frequency is maximal for the perpendiculat light polarization. Luminescence emitted by semiconductor nanowires and nanorods is strongly polarized along their axis. Joint action of polarization effects in absorption and luminescence results in the polarization memory, when luminescence of a random ensemble of nanorods is polarized in the same direction as the exciting light.
1 citations