Showing papers on "Photonic crystal published in 1978"
Proceedings Article•
01 Jan 1978
TL;DR: The well-controlled exponential ID(VS) characteristics of MOS transistors operating in weak inversion allows the realization of a very good bandgap reference compatible with CMOS technologies and operating with an input voltage as low as 1.3 V.
Abstract: The well-controlled exponential ID(VS) characteristics of MOS transistors operating in weak inversion allows the realization of a very good bandgap reference compatible with CMOS technologies and operating with an input voltage as low as 1.3 V. Variations of less than 3 mV over more than 100oC have been obtained on a few samples and are certainly within reach for each circuit with an adjustment. The temperature range can be further extended by improving the design.
4 citations