Showing papers on "Spice published in 1982"

SPICE Modeling for Small Geometry MOSFET Circuits

Abstract: VLSI circuit simulation requires computationally efficient MOSFET models. In this paper, VLSI circuit simulator models for the active device and some important passive devices are described. A quasi-physical short channel MOSFET current model is derived. This current model contains both above-threshold and subthreshold components. The values of the model parameter are extracted automatically from measured I-V data. The reduction in process information in this representation is shown to be tolerable using a proper quantization of the geometry and device type space. Narrow width effect is also included. A charge conserving MOSFET capacitor model is also given. The importance of the parasitic devices on VLSI circuit is shown and a model for the fringing capacitance due to finite gate thickness is introduced. A "process box" based on the statistical variation of parameters is extracted from a completely automated device characterization system. Experimental results indicate that the width and length are independent random variables. This statistical information allows the circuit response to be simulated across the process window.

Sterilizing method of spice

Abstract: PURPOSE:To sterilize a spice without degrading the quality thereof, by bringing the spice into contact with a mixture gas of an alcoholic gas with steam, and drying the spice at a high temperature in a short time. CONSTITUTION:A spice is fed from a hopper 41 through a valve 42 onto a conveyor 44, and steam and alcoholic gas generated in boilers 45 and 46 are jetted through pipings 47 and 48 from jetting pipes 49 and 50 and then brought into contact with the spice on the conveyor 44. The treated spice is then taken out of a valve 57 and dried at 80-115 deg.C for 2min-30sec by the fluidized bed drying. Pepper, cinnamon or sage may be cited as the spice, and the treatment is carried out by using the mixture of the alcoholic gas with steam at a volume ratio of (50-70):(50-30) at a temperature, e.g. 55-70 deg.C, 25 deg.C or more higher than that of the spice and an amount of steam >=5.6kg/m .

Overview of device characterization software for VLSI bipolar devices

Abstract: In this paper we present a software package for calculating the SPICE II Gummel-Poon modeling parameters for BJT device structures encountered in VLSl IC's directly from mask geometry and diffusion profiles. This software effectively bridges the gap between process design and device characterization. The heart of the software package uses sophisticated 1, 2 and quasi 3 dimensional device simulator programs in which carrier transport equations are solved by employing a hybrid solution technique. By partitioning the simulator into 4 sections, SPICE II modeling parameters can be obtained very quickly for a set process and specified mask geometry.