We present a comprehensive, up-to-date compilation of band parameters for the technologically important III–V zinc blende and wurtzite compound semiconductors: GaAs, GaSb, GaP, GaN, AlAs, AlSb, AlP, AlN, InAs, InSb, InP, and InN, along with their ternary and quaternary alloys. Based on a review of the existing literature, complete and consistent parameter sets are given for all materials. Emphasizing the quantities required for band structure calculations, we tabulate the direct and indirect energy gaps, spin-orbit, and crystal-field splittings, alloy bowing parameters, effective masses for electrons, heavy, light, and split-off holes, Luttinger parameters, interband momentum matrix elements, and deformation potentials, including temperature and alloy-composition dependences where available. Heterostructure band offsets are also given, on an absolute scale that allows any material to be aligned relative to any other.

Band parameters for III–V compound semiconductors and their alloys

We present a comprehensive and up-to-date compilation of band parameters for all of the nitrogen-containing III–V semiconductors that have been investigated to date. The two main classes are: (1) “conventional” nitrides (wurtzite and zinc-blende GaN, InN, and AlN, along with their alloys) and (2) “dilute” nitrides (zinc-blende ternaries and quaternaries in which a relatively small fraction of N is added to a host III–V material, e.g., GaAsN and GaInAsN). As in our more general review of III–V semiconductor band parameters [I. Vurgaftman et al., J. Appl. Phys. 89, 5815 (2001)], complete and consistent parameter sets are recommended on the basis of a thorough and critical review of the existing literature. We tabulate the direct and indirect energy gaps, spin-orbit and crystal-field splittings, alloy bowing parameters, electron and hole effective masses, deformation potentials, elastic constants, piezoelectric and spontaneous polarization coefficients, as well as heterostructure band offsets. Temperature an...

Band parameters for nitrogen-containing semiconductors

The group III nitrides (AlN, GaN and InN) represent an important trio of semiconductors because of their direct band gaps which span the range 1.95-6.2 eV, including the whole of the visible region and extending well out into the ultraviolet (UV) range. They form a complete series of ternary alloys which, in principle, makes available any band gap within this range and the fact that they also generate efficient luminescence has been the main driving force for their recent technological development. High brightness visible light-emitting diodes (LEDs) are now commercially available, a development which has transformed the market for LED-based full colour displays and which has opened the way to many other applications, such as in traffic lights and efficient low voltage, flat panel white light sources. Continuously operating UV laser diodes have also been demonstrated in the laboratory, exciting tremendous interest for high-density optical storage systems, UV lithography and projection displays. In a remarkably short space of time, the nitrides have therefore caught up with and, in some ways, surpassed the wide band gap II-VI compounds (ZnCdSSe) as materials for short wavelength optoelectronic devices. The purpose of this paper is to review these developments and to provide essential background material in the form of the structural, electronic and optical properties of the nitrides, relevant to these applications. We have been guided by the fact that the devices so far available are based on the binary compound GaN (which is relatively well developed at the present time), together with the ternary alloys AlGaN and InGaN, containing modest amounts of Al or In. We therefore concentrate, to a considerable extent, on the properties of GaN, then introduce those of the alloys as appropriate, emphasizing their use in the formation of the heterostructures employed in devices. The nitrides crystallize preferentially in the hexagonal wurtzite structure and devices have so far been based on this material so the majority of our paper is concerned with it, however, the cubic, zinc blende form is known for all three compounds, and cubic GaN has been the subject of sufficient work to merit a brief account in its own right. There is significant interest based on possible technological advantages, such as easier doping, easier cleaving (for laser facets) and easier contacting. It also appears, at present, that the cubic form gives higher electron and hole mobilities than the hexagonal form. The dominant hexagonal structure is similar to that found in a number of II-VI compounds such as CdS and they can therefore be taken as role models. In particular, the lower symmetry gives rise to three separate valence bands at the zone centre and exciton spectra associated with each of these have been reported by many workers for GaN. Interpretation is complicated by the presence of strain in many samples due to the fact that most material consists of epitaxial thin films grown on non-lattice-matched substrates (bulk GaN crystals not being widely available). However, much progress has been made in understanding the physics of these films and we discuss the current position with regard to band gaps, effective masses, exciton binding energies, phonon energies, dielectric constants, etc. Apart from a lack of knowledge of the anticipated valence band anisotropy, it can be said that GaN is now rather well documented. Less detail is available for AlN or InN and we make no attempt to provide similar data for them. The structure of the paper is based on a historical introduction, followed by a brief account of the various crystal growth methods used to produce bulk GaN and epitaxial films of GaN and the ternary alloys. This is then followed by an account of the structural properties of hexagonal GaN as measured by x-ray diffraction and electron microscopy, phonon properties from infrared and Raman spectroscopy, electrical properties, with emphasis on n- and p-type doping, and optical properties, measured mainly by photoluminescence. A brief comparative account of cubic GaN properties follows. Discussion of alloy properties in the context of their use in quantum well and superlattice structures forms an introduction to the device sections which close the paper. These include details of the technology necessary for etching, contacting and forming laser facets, as an introduction to recent results on LEDs and laser diodes. Having described the current position, we speculate briefly on likely future developments.

https://iopscience.iop.org/article/10.1088/0034-4885/61/1/001/pdf

Group III nitride semiconductors for short wavelength light-emitting devices

We have derived consistent sets of band parameters band gaps, crystal field splittings, band-gap deformation potentials, effective masses, and Luttinger and EP parameters for AlN, GaN, and InN in the zinc-blende and wurtzite phases employing many-body perturbation theory in the G0W0 approximation. The G0W0 method has been combined with density-functional theory DFT calculations in the exact-exchange optimized effective potential approach to overcome the limitations of local-density or gradient-corrected DFT functionals. The band structures in the vicinity of the point have been used to directly parametrize a 44 k·p Hamiltonian to capture nonparabolicities in the conduction bands and the more complex valence-band structure of the wurtzite phases. We demonstrate that the band parameters derived in this fashion are in very good agreement with the available experimental data and provide reliable predictions for all parameters, which have not been determined experimentally so far.

/pdf/consistent-set-of-band-parameters-for-the-group-iii-nitrides-3ws59u18fv.pdf

Consistent set of band parameters for the group-III nitrides AlN, GaN, and InN

Temperature-dependent Hall-effect measurements in hydride vapor phase epitaxial GaN grown on sapphire can be well fitted over the temperature range 10–400 K by assuming a thin, degenerate n-type region at the GaN/sapphire interface. This degenerate interfacial region dominates the electrical properties below 30 K, but also significantly affects those properties even at 400 K, and can cause a second, deeper donor to falsely appear in the analysis. However, by using a two-layer Hall model, the bulk mobility and carrier concentration can be accurately ascertained.

/pdf/degenerate-layer-at-gan-sapphire-interface-influence-on-hall-279eampis2.pdf

Degenerate layer at GaN/sapphire interface: Influence on Hall-effect measurements

Shallow donors in GaN—The binding energy and the electron effective mass

The Effective Mass Donor in Galliumnitride

In cases of systematic lupus erythematosus (SLE) that lead to surgery due to the development of heart diseases such as valvular disease, ischemic heart disease and aortic aneurysm, early detection and careful monitoring are important. An absence of background diseases or immunopathological examination of the myocardial tissue in SLE cases with cardiovascular lesions demonstrates the lack of knowledge in this area. In recent years, however, there have been reports of neutrophil extracellular traps being involved in the fulminant onset of SLE.This study aimed to analyze clinically and immunohistopathologically the pathophysiology of heart diseases associated with SLE.We performed left atrial appendage resection in 34 patients, including patients with cardiovascular lesions, who underwent heart surgery for SLE complications from 2012 to 2021. Tissue analysis was conducted in 9 cases. The left atrial appendage, in cases of non-collagen valvular disease, was used as the control. Tissue staining of cardiomyocytes was carried out by adding anti-neutrophil extracellular(NE) antibodies(Abs) to anti-human IgG antibody (Ab), anti-IgM Ab and anti-C3 Ab.Of the 34 SLE patients 14 had valvular disease, 8 had ischemic heart disease and 12 had aneurysms. Preoperative SLE activity was relatively stable with only 1 patient below the CH50 standard and 6 patients above the anti-DNA Ab standard. The Ab positivity rate for the patients in this study was higher than that of the 687 SLE patients who were previously tested in 2019. The presence of anti-CL Abs was 55.6%, which was higher than the 25.5% observed in previous SLE patients. In this study, anti-SS-A and anti-RNP Abs tended to be relatively numerous. An example of immunohistochemical staining of IgG in the left atrial appendage is presented (Figure 1a). IgG deposits were not observed on the left side of the myocardial fibers in the control group, whereas IgG deposits were observed on the right side in the SLE group. Deposits were also observed in tissues that were not located in the affected areas. The presence or absence of tissue deposition in the myocardial fibers and clinical findings in 2 cases of the control group and 9 cases of the SLE complication group are reported in Table 1. IgG deposits were found in the myocardial fibers of 6 of the 9 patients in the SLE complication group, and deposits were found in the left atrial appendage tissue regardless of the type of heart disease, suggesting a potential change in the heart tissue. In the SLE group, 5 cases were positive for antiphospholipid (APS) Abs, while 7 cases were positive for either anti-SS-A or anti-RNP Abs. Only 2 cases had elevated preoperative anti-DNA Ab and complement reduction. Of the SLE complication group, 2 of the 9 cases were negative for all Abs but IgG deposits were observed in a case. Of these 4 cases were selected and stained with anti-IgM, anti-C3 and anti-NE Abs. However IgM and C3 deposits were only observed in one patient who developed myocardial infarction at the age of 39 and was triple positive for APS, anti-SS-A and anti-RNP Abs (Figure 1b). There were also no NE deposits in any of the cases. Even if complement and anti-DNA Ab levels in the serum are normal, attention should be paid to heart disease complications during the long-term observation of SLE patients. In particular, attention should be paid to various autoantibody-positive cases such as APS, anti-SS-A Ab and anti-RNP Ab. The anti-NE Ab was not stained in this study because the tissue was different from the lesion site and because it occurred during the chronic course.In SLE patients who developed cardiovascular lesions and required surgery, immunological abnormalities may occur in the myocardial tissue even if serum complement and anti-DNA Ab levels are stable.[1]Stephane Zuily et al. Valvular Curr Rheumatol Rep (2013) 15:320.[2]Zawadowski GM et al. Lupus. 2012;21(13):1378-84.[3]Daniel Appelgren et al. Autoimmunity 2018,vol51,No.6,310-318.None declared

/pdf/op0238-clinical-analysis-of-34-cases-of-cardiac-3ejnech4.pdf

Op0238 clinical analysis of 34 cases of cardiac complications requiring surgical intervention in systemic lupus erythematosus and assessment about mechanism of development with immunological analysis

A. Amano

Papers

Shallow donors in GaN—The binding energy and the electron effective mass

The Effective Mass Donor in Galliumnitride

Op0238 clinical analysis of 34 cases of cardiac complications requiring surgical intervention in systemic lupus erythematosus and assessment about mechanism of development with immunological analysis