This paper compares the performance of source-tuner noise-parameter extraction methods used to measure noise parameters of low-noise amplifiers that have very low (1 dB) noise figures. The methods discussed are known as the Cold method and the modified Y -factor method (or Hot-Cold method). The paper describes equations used in the extraction algorithms. In a Monte Carlo analysis by randomly adding various sources of uncertainties to ?measurements,? created with a computer simulation, performances of the noise parameter extraction methods are compared. It is shown that the iterative Cold method and the direct Cold method are the best at extracting Rn and ?opt noise parameters in terms of lowest standard deviation and close proximity of the extracted mean values to the true values. The simplified Cold method, used in a number of commercial systems, has largest systematic offsets in extracted noise parameters while being the quickest to perform. The modified Y-factor method is the slowest to perform due to additional time required for hot measurements. This method is marginally the most accurate to extract F min. These conclusions are also supported with measurement results. This study assembles in one place necessary theoretical background information to serve as a reference for those who are working in the field of noise parameter extraction using tuner-based methods.

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Evaluation of Tuner-Based Noise-Parameter Extraction Methods for Very Low Noise Amplifiers

Microwave noise performance of state-of-the-art AIN/GaN high-electron-mobility transistors (HEMTs) grown on 100-mm Si substrate has been investigated. DC and RF measurements show the outstanding potential of this structure for high power millimeter-wave (mmW) applications. A maximum output current density of about 2 A/mm, together with a low gate leakage current, and a record GaN-on-Si extrinsic transconductance above 600 mS/mm are demonstrated. The current gain cutoff frequency fT and the maximum oscillation frequency fmax were 85 and 103 GHz, respectively, with a 0.16-μm gate length. At VDS = 4 V, the device exhibits a minimum noise figure (NFmin) of 1 dB (1.8 dB) with an associated gain (GA) of 12 dB (10 dB) at 10 GHz (18 GHz) favorably comparable to the best reported GaN-on-Si HEMTs. These results show that AIN/GaN HEMTs grown on silicon substrate are promising for the integration of cost effective, low noise, and high power mmW amplifiers.

Low-Noise Microwave Performance of AlN/GaN HEMTs Grown on Silicon Substrate

A novel method to determine the noise parameters of receivers or devices under test (DUTs) for on-wafer microwave noise measurements is presented. An iterative technique is utilized, and fast convergence is achieved by the proposed impedance selection principle. This proposed method reduces the parameter variations in the conventional methods. The impact of the impedance difference on noise parameter determination is experimentally evaluated using a DUT fabricated in a standard 90-nm CMOS technology.

Novel Noise Parameter Determination for On-Wafer Microwave Noise Measurements

Using a thin film technology, we have designed and fabricated a new passive device for noise parameter measurement test instrumentation verification. The main feature specifying this device is the same order of magnitude for input-output reflection coefficients and for noise parameters, as for low-noise field effect transistors. This new device is useful as a verification artifact, suited for on-wafer measurements due to its small size and wide operation bandwidth. >

Verification of on-wafer noise parameter measurements

We report on the millimeter-wave noise performance of AlN/GaN/AlGaN double heterostructure (DHFET) grown on a 100-mm Si substrate with low-noise properties up to 40 GHz. The ultrathin-barrier GaN DHFETs simultaneously exhibit high current density, high transconductance, and high frequency performance (above 100 GHz) while showing low dc-to-RF dispersion and low gate and drain leakage currents. Consequently, sub-1-dB minimum noise figure at 36 GHz with an associated gain of 7.5 dB has been achieved. To our knowledge, this is the best noise performance reported in the Ka-band for any GaN device.

Sub-1-dB Minimum-Noise-Figure Performance of GaN-on-Si Transistors Up to 40 GHz

In spite of the improvements in RF instrumentation, network analyzer calibration methods, and measurement techniques, the measurement of noise parameters in highly mismatched systems is particularly prone to error. A homemade automated noise parameter measurement system is described, and a new algorithm for the estimation of the two-port noise parameters is presented. Analytical calculation of the parameter accuracy is developed, by taking into account the measurement uncertainties. The accuracy and the repeatability of the measurements performed with a low-noise HEMT are presented. >

A. Boudiaf

Papers

An accurate and repeatable technique for noise parameter measurements