Power electronics plays an important role in a wide range of applications in order to achieve high efficiency and performance. Increasing efforts are being made to improve the reliability of power electronics systems to ensure compliance with more stringent constraints on cost, safety, and availability in different applications. This paper presents an overview of the major failure mechanisms of IGBT modules and their handling methods in power converter systems improving reliability. The major failure mechanisms of IGBT modules are presented first, and methods for predicting lifetime and estimating the junction temperature of IGBT modules are then discussed. Subsequently, different methods for detecting open- and short-circuit faults are presented. Finally, fault-tolerant strategies for improving the reliability of power electronic systems under field operation are explained and compared in terms of performance and cost.

Study and Handling Methods of Power IGBT Module Failures in Power Electronic Converter Systems

Inverters play key roles in motor drives, flexible power transmissions, and recently grid-tied renewable energy generation units. Therefore, availability and reliability of inverters have become increasingly important. Following early stage fault detections in inverters, remedial actions can extend normal operation of inverters and, in some cases, derate the system to prevent unexpected shutdowns. A remedial action typically contains a combination of hardware and software reconfigurations. The main purpose of this paper is to provide an instructive survey of existing fault-tolerance (remedial) techniques for three-phase, two-level, and multilevel inverters.

Survey of Fault-Tolerance Techniques for Three-Phase Voltage Source Inverters

Recent growth of the insulated gate bipolar transistor (IGBT) module market has been driven largely by the increasing demand for an efficient way to control and distribute power in the field of renewable energy, hybrid/electric vehicles, and industrial equipment. For safety-critical and mission-critical applications, the reliability of IGBT modules is still a concern. Understanding the physics-of-failure of IGBT modules has been critical to the development of effective condition monitoring (CM) techniques as well as reliable prognostic methods. This review paper attempts to summarize past developments and recent advances in the area of CM and prognostics for IGBT modules. The improvement in material, fabrication, and structure is described. The CM techniques and prognostic methods proposed in the literature are presented. This paper concludes with recommendations for future research topics in the CM and prognostics areas.

Physics-of-Failure, Condition Monitoring, and Prognostics of Insulated Gate Bipolar Transistor Modules: A Review

Three-phase inverters are currently utilized in an enormous variety of industrial applications, including variable-speed ac drives. However, due to their complexity and exposure to several stresses, they are prone to suffer critical failures. Accordingly, this paper presents a novel diagnostic algorithm that allows the real-time detection and localization of multiple power switch open-circuit faults in inverter-fed ac motor drives. The proposed method is quite simple and just requires the measured motor phase currents and their corresponding reference signals, already available from the main control system, therefore avoiding the use of additional sensors and hardware. Several experimental results using a vector-controlled permanent-magnet synchronous motor drive are presented, showing the diagnostic algorithm effectiveness, its relatively fast detection time, and its robustness against false alarms.

A New Algorithm for Real-Time Multiple Open-Circuit Fault Diagnosis in Voltage-Fed PWM Motor Drives by the Reference Current Errors

This paper presents a diagnostic and prognostic condition monitoring method for insulated-gate bipolar transistor (IGBT) power modules for use primarily in electric vehicle applications. The wire-bond-related failure, one of the most commonly observed packaging failures, is investigated by analytical and experimental methods using the on-state voltage drop as a failure indicator. A sophisticated test bench is developed to generate and apply the required current/power pulses to the device under test. The proposed method is capable of detecting small changes in the failure indicators of the IGBTs and freewheeling diodes and its effectiveness is validated experimentally. The novelty of the work lies in the accurate online testing capacity for diagnostics and prognostics of the power module with a focus on the wire bonding faults, by injecting external currents into the power unit during the idle time. Test results show that the IGBT may sustain a loss of half the bond wires before the impending fault becomes catastrophic. The measurement circuitry can be embedded in the IGBT drive circuits and the measurements can be performed in situ when the electric vehicle stops in stop-and-go, red light traffic conditions, or during routine servicing.

/pdf/in-situ-diagnostics-and-prognostics-of-wire-bonding-faults-2hvppczdij.pdf

In Situ Diagnostics and Prognostics of Wire Bonding Faults in IGBT Modules for Electric Vehicle Drives

In this paper, a novel failure-detection technique and its analog circuit for insulated gate bipolar transistors (IGBTs), under open- and short-circuit failures, are proposed. This technique is applied to a three-phase induction-motor (IM) drive system. The detection technique is adapted to detect failures of short-circuit and open-circuit in the IGBT, which is based on gate-signal monitoring. The most important issue of this technique is the reduction of time for fault detection. This is very important in a failure-tolerant IM drive based on the material-redundancy approach or protection systems since the detection must be done before the device is damaged, in approximately less than 10 μs. The experimental test and simulations are presented in order to validate the proposed fault-detection technique, and it is validated, achieving replacement of the damaged element in the most suitable time.

A Claudio-Sánchez

Papers

A Failure-Detection Strategy for IGBT Based on Gate-Voltage Behavior Applied to a Motor Drive System