Formation, structure (stereochimie et stereodynamique), et donnees de spectroscopie RMN des composes du titre

Molecular and electronic structure of penta- and hexacoordinate silicon compounds

A novel method for synthesizing device-quality alloys and ordered phases in a Si-Ge-Sn system uses a UHV-CVD process and reactions of SnD4 with SiH3GeH3. Using the method, single-phase Si x Sn y Ge 1-x-y semiconductors (x ≤ 0.25, y ≤ 0.11) are grown on Si via Ge1-xSnx buffer layers The Ge1-xSnx buffer layers facilitate heteroepitaxial growth of the Si x Sn y Ge 1-x-y films and act as compliant templates that can conform structurally and absorb the differential strain imposed by the more rigid Si and Si-Ge-Sn materials. The SiH3GeH3 species was prepared using a new and high yield method that provided high purity semiconductor grade material.

Sixsnyge1-x-y and related alloy heterostructures based on si, ge and sn

A method for depositing an epitaxial Ge—Sn layer on a substrate in a CVD reaction chamber includes introducing into the chamber a gaseous precursor comprising SnD4 under conditions whereby the epitaxial Ge—Sn layer is formed on the substrate the gaseous precursor comprises SnD4 and high purity H2 of about 15-20% by volume The gaseous precursor is introduced at a temperature in a range of about 250° C to about 350° C Using the process device-quality Sn—Ge materials with tunable bandgaps can be grown directly on Si substrates

Gesn alloys and ordered phases with direct tunable bandgaps grown directly on silicon

A process for is provided for synthesizing a compound having the formula E(GeH3)3 wherein E is selected from the group consisting of arsenic (As), antimony (Sb) and phosphorus (P). GeH3Br and [CH3)3Si]3E are combined under conditions whereby E(GeH3)3 is obtained. The E(GeH3)3 is purified by trap-to-trap fractionation. Yields from about 70% to about 76% can be obtained. The E(GeH3)3 can be used as a gaseous precursor for doping a region of a semiconductor material comprising Ge, SnGe, SiGe and SiGeSn in a chemical vapor deposition reaction chamber.

Method for preparing Ge1-x-ySnxEy (E=P, As, Sb) semiconductors and related Si-Ge-Sn-E and Si-Ge-E analogs

http://users.auth.gr/akrivos/Metaptyxiaka/Proxorimeni%20Anorgani/Coord_Chem_Rev_145_1995_157.pdf

A.G. Robiette

Papers

Electron diffraction study of large amplitude vibrations in H3SiNCO and H3SiNCS

An electron diffraction determination of the molecular structure of methyl silyl ether

An electron diffraction determination of the molecular structures of perchlorodisiloxane and methoxytrifluorosilane

The molecular structure of n-methyldisilylamine

The molecular structure of monomeric n-silyldimethylamine