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A. Ino

Researcher at University of Tokyo

Publications -  18
Citations -  806

A. Ino is an academic researcher from University of Tokyo. The author has contributed to research in topics: Pseudogap & Angle-resolved photoemission spectroscopy. The author has an hindex of 10, co-authored 18 publications receiving 788 citations. Previous affiliations of A. Ino include Japan Atomic Energy Research Institute.

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Doping-dependent Evolution of the Electronic Structure of La2-xSrxCuO4 in the Superconducting and Metallic Phases

TL;DR: The electronic structure of the LSCO system has been studied by angle-resolved photoemission spectroscopy (ARPES) as discussed by the authors, where the authors report on the evolution of the Fermi surface, the superconducting gap, and the band dispersion around the extended saddle point with hole doping in the super-conducting and metallic phases.
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Chemical Potential Shift in Overdoped and Underdoped La 2 − x Sr x CuO 4

TL;DR: In this paper, the downward shift of the electron chemical potential with hole doping was deduced from the shifts of photoemission and inverse-photoemission spectra, implying a divergent charge susceptibility near the metal-insulator transition.
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Electronic structure of La 2-x Sr x CuO 4 in the vicinity of the superconductor-insulator transition

TL;DR: In this paper, angle-resolved photo-emission study of an optimally doped superconductor to an antiferromagnetic insulator was performed, and it was shown that the dispersive band crossing the Fermi level becomes invisible in the $(0, 0)-direction.
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Doping Dependent Density of States and Pseudogap Behavior in La 2 − x Sr x CuO 4

TL;DR: In this paper, a high-resolution photoemission study of a wide hole concentration range from heavily overdoped metal to an undoped insulator was made, where the spectral density of states at the chemical potential was suppressed with an $x$ dependence similar to the suppression of the electronic specific heat coefficient.