We describe the synthesis of ZnS-capped CdSe semiconductor nanocrystals using organometallic reagents by a two-step single-flask method X-ray photoelectron spectroscopy, transmission electron microscopy and optical absorption are consistent with nanocrystals containing a core of nearly monodisperse CdSe of 27−30 A diameter with a ZnS capping 6 ± 3 A thick The ZnS capping with a higher bandgap than CdSe passivates the core crystallite removing the surface traps The nanocrystals exhibit strong and stable band-edge luminescence with a 50% quantum yield at room temperature

Synthesis and Characterization of Strongly Luminescing ZnS-Capped CdSe Nanocrystals

Nanochemistry: Synthesis in diminishing dimensions

This review is concerned with quantum confinement effects in low-dimensional semiconductor systems. The emphasis is on the optical properties, including luminescence, of nanometre-sized microcrysta...

Low-dimensional systems: quantum size effects and electronic properties of semiconductor microcrystallites (zero-dimensional systems) and some quasi-two-dimensional systems

Due to the high theoretical capacity (ca. 4200 mAhg ) of Si when Li4.4Si is formed, it has been extensively investigated for use as a high-capacity anode material that can replace graphite, which is currently used (372 mAhg ). However, Si exhibits significant volume changes (> 360%) during Li alloying and dealloying. These changes cause cracking and crumbling of the electrode material and a consequent loss of electrical contact between individual particles and hence severe capacity drop. However, such mechanical strain induced by volume change can be reduced by employing smaller particles. To this end, synthetic methods such as spark ablation, aerogel techniques, and sputtering have been employed. Formation of crystalline Si nanoparticles requires higher temperatures due to the more covalent nature of these particles compared to Ge particles, and at low temperature amorphous phases become more common. The first commonly recognized successful production of Si nanoclusters was reported byHeath et al. They showed that Si nanocrystals capped with alkyl groups can be produced by reduction of SiCl4 and RSiCl3 (R=H, C8H17) according to the reaction SiCl4+RSiCl3+Na!Si+NaCl. This process was carried out at high temperature (385 8C) and high pressure (>100 atm) in a steel bomb fitted into a heating mantle. A process that utilizes SiCl4 reduction at room temperature under an inert atmosphere was initially reported by Kauzlarich et al. However, the drawback of their method was that the product obtained at room temperature was not fully crystallized and was severely capped with alkyl terminators. Moreover, an annealing process above 900 8C is required to obtain the crystalline phase. Similar solution syntheses have been reported at low or high temperature after reducing Si salts with LiAlH4 [13,14] or alkyl silanes. However, all of these methods produce a broad particle size distribution or involve aggregation of the nanoparticles. Furthermore, they all yield amounts of material too small for use in anode production for lithium secondary batteries. We now report a synthetic method using reverse micelles at high pressure and temperature in a bomb that produces Si nanoparticles (n-Si) with various particle sizes without aggregation and thus enables the optimal nanoparticle size for use in anode materials to be chosen. Figure 1 shows the XRD pattern and TEM images of n-Si prepared with trimethyloctadecylammonium bromide (OTAB) surfactant. The XRD pattern clearly shows forma-

A Critical Size of Silicon Nano‐Anodes for Lithium Rechargeable Batteries

The origin of visible luminescencefrom “porous silicon”: A new interpretation

Visible photoluminescence was observed in ultrafine Si particles at room temperature. Transmission electron microscopy revealed that Si microcrystallites were embedded in a Si oxide matrix for the sample which emitted the light. The emission energy depended on crystallite size in the range from 2.8 to 5 nm. The inverse relation between emission energy and the square of the crystallite size indicates that carrier confinement in the Si microcrystallites causes this photoluminescence phenomenon.

A. Ishizaki

Papers

Quantum size effects on photoluminescence in ultrafine Si particles