https://tandfonline.com/doi/pdf/10.1080/14686996.2019.1599694

New development of atomic layer deposition: processes, methods and applications.

This article provides an overview of area-selective thin film deposition (ASD) with primary focus on vapor-phase thin film formation via chemical vapor deposition (CVD) and atomic layer deposition ...

Area-Selective Deposition: Fundamentals, Applications, and Future Outlook

The chemical approaches enabling selective atomic layer deposition (ALD) are gaining growing interest. The selective ALD has unlocked attractive avenues for the development of novel nanostructures ...

Inherently Selective Atomic Layer Deposition and Applications

Thin film fabrication is necessary to realize the device integration of organic–inorganic hybrid perovskites (OIHPs), and solution-based crystallization methods have been employed widely to this en...

Perovskite Pattern Formation by Chemical Vapor DepositionUsing Photolithographically Defined Templates

In the past decades, Moore's law drives the semiconductor industry to continuously shrink the critical size of transistors down to 7 nm. As transistors further downscaling to smaller sizes, the law reaches its limitation, and the increase of transistors density on the chip decelerates. Up to now, extreme ultraviolet lithography has been used in some key steps, and it is facing alignment precision and high costs for high-volume manufacturing. Meanwhile, the introduction of new materials and 3D complex structures brings serious challenges for top-down methods. Thus, bottom-up schemes are believed to be necessary methods combined with the top-down processes. In this article, atomic level deposition methods are reviewed and categorized to extend Moore's law and beyond. Firstly, the deposition brings lateral angstrom resolution to the vertical direction as well as top-down etching, such as double patterning, transfer of nanowires, deposition of nanotubes, and so on. Secondly, various template-assisted selective deposition methods including dielectric templates, inhibitors and correction steps have been utilized for the alignment of 3D complex structures. Higher resolution can be achieved by inherently selective deposition, and the underlying selective mechanism is discussed. Finally, the requirements for higher precision and efficiency manufacturing are also discussed, including the equipment, integration processes, scale-up issues, etc. The article reviews low dimensional manufacturing and integration of 3D complex structures for the extension of Moore's law in semiconductor fields, and emerging fields including but not limited to energy, catalysis, sensor and biomedicals.

https://iopscience.iop.org/article/10.1088/2631-7990/ab83e0/pdf

Atomic level deposition to extend Moore’s law and beyond

Area-selective atomic layer deposition (ALD) of ZnO was achieved on SiO2 seed layer patterns on Hterminated silicon substrates, using diethylzinc (DEZ) as the zinc precursor and H2O as the coreactant. The selectivity of the ALD process was studied using in situ spectroscopic ellipsometry and scanning electron microscopy, revealing improved selectivity for increasing deposition temperatures from 100 to 300 °C. The selectivity was also investigated using transmission electron microscopy and energy-dispersive X-ray spectroscopy. Density functional theory (DFT) calculations were performed to corroborate the experimental results obtained and to provide an atomic-level understanding of the underlying surface chemistry. A kinetically hindered proton transfer reaction from the H-terminated Si was conceived to underpin the selectivity exhibited by the ALD process. By combining the experimental and DFT results, we suggest that the trend in selectivity with temperature may be due to a strong DEZ or H2O physisorption on the H-terminated Si that hampers high selectivity at low deposition temperature. This work highlights the deposition temperature as an extra process parameter to improve the selectivity.

/pdf/area-selective-atomic-layer-deposition-of-zno-by-area-1emkc1tyrg.pdf

A.J.M. Mackus

Papers

Area-selective atomic layer deposition of ZnO by area activation using electron beam-induced deposition