High emissivity coatings for high temperature application: Progress and prospect

Silicon carbide (SiC) is recognized as the leading semiconductor for high power and high temperature electronics owing to its outstanding electrical properties combined with mature processing technologies for monolithic structures. SiC has long been known for its outstanding mechanical and chemical properties making it equally attractive for mechanical structures in micro- and nanoelectromechanical systems (MEMS and NEMS). Recent advancements in bulk and surface micromachining have led to the development of SiC analogues to common Si-based devices (i.e., resonators, pressure sensors). This paper presents an overview of MEMS and NEMS technologies that incorporate SiC as a key component in their mechanical structure, providing both a historical perspective as well as recent developments. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Micro‐ and nanomechanical structures for silicon carbide MEMS and NEMS

Thermally oxidised rutile-TiO2 coating on stainless steel for tribological properties and corrosion resistance enhancement

Electron beam-physical vapor deposition of SiC/SiO2 high emissivity thin film

Hydrogen-free amorphous and nanocrystalline films were prepared by magnetron sputtering of the SiC or Si targets. Mechanical properties (hardness, elastic modulus, intrinsic stress) and film structures were investigated in dependence on the substrate bias and temperature. It was found that both hardness and elastic modulus of all amorphous a-SiC films prepared at different substrate temperatures and biases are always lower than those for bulk α-SiC single crystal while the hardness of partially crystalline SiC films is higher and the elastic modulus lower than those for α-SiC one. In contrast, both hardness and elastic modulus of all amorphous Si films are always lower than those for nanocrystalline Si films which show approximately the same value as the Si single crystal.

Hardness and elastic modulus of amorphous and nanocrystalline SiC and Si films

Characterization of ultra-hard silicon carbide coatings deposited by RF magnetron sputtering

In this work, SiC films were deposited by r.f. magnetron sputtering onto WC and silicon substrates from a commercial sintered SiC target. After determining the influence of deposition parameters on the properties of the films deposited onto silicon substrates, suitable conditions were chosen to produce high quality 5 μm thick films on WC pieces. Mechanical characterization of the films was done by microhardness and residual stress measurements. High deposition rates (up to 40 nm/min), relatively low compressive residual stresses (

A.K Costa

Papers

Characterization of ultra-hard silicon carbide coatings deposited by RF magnetron sputtering

Amorphous SiC coatings for WC cutting tools