A
A. V. Rykov
Researcher at N. I. Lobachevsky State University of Nizhny Novgorod
Publications - 11
Citations - 29
A. V. Rykov is an academic researcher from N. I. Lobachevsky State University of Nizhny Novgorod. The author has contributed to research in topics: Metalorganic vapour phase epitaxy & Laser. The author has an hindex of 4, co-authored 8 publications receiving 26 citations.
Papers
More filters
Journal ArticleDOI
Electrically pumped InGaAs/GaAs quantum well microdisk lasers directly grown on Si(100) with Ge/GaAs buffer.
N. V. Kryzhanovskaya,Eduard Moiseev,Yu. S. Polubavkina,Mikhail V. Maximov,M. M. Kulagina,S. I. Troshkov,Yu. M. Zadiranov,Andrey A. Lipovskii,N. V. Baidus,Alexander A. Dubinov,Z. F. Krasilnik,A. V. Novikov,D. A. Pavlov,A. V. Rykov,A. A. Sushkov,D. V. Yurasov,Alexey E. Zhukov +16 more
TL;DR: This work reports the first quantum well electrically-pumped microdisk lasers monolithically deposited on (001)-oriented Si substrate, and lasing spectrum is predominantly single-mode with a dominant mode linewidth as narrow as 35 pm.
Journal ArticleDOI
Peculiarities of growing InGaAs/GaAs/AlGaAs laser structures by MOCVD on Ge/Si substrates
N. V. Baidus,V. Ya. Aleshkin,V. Ya. Aleshkin,Alexander A. Dubinov,Alexander A. Dubinov,K. E. Kudryavtsev,K. E. Kudryavtsev,S. M. Nekorkin,A. V. Novikov,A. V. Novikov,D. A. Pavlov,A. V. Rykov,A. A. Sushkov,Mikhail Shaleev,Mikhail Shaleev,Pavel A. Yunin,Pavel A. Yunin,D. V. Yurasov,D. V. Yurasov,A. N. Yablonskiy,Z. F. Krasilnik,Z. F. Krasilnik +21 more
TL;DR: In this paper, the growth of InGaAs/GaA/AlGaAs laser structures by MOCVD at low pressures on Si(001) substrates with a Ge epitaxial metamorphic buffer layer of various thicknesses is studied.
Journal ArticleDOI
Technology of the production of laser diodes based on GaAs/InGaAs/AlGaAs structures grown on a Ge/Si substrate
V. Ya. Aleshkin,V. Ya. Aleshkin,N. V. Baidus,N. V. Baidus,Alexander A. Dubinov,Alexander A. Dubinov,K. E. Kudryavtsev,K. E. Kudryavtsev,S. M. Nekorkin,A. V. Novikov,A. V. Novikov,A. V. Rykov,I. V. Samartsev,A. G. Fefelov,D. V. Yurasov,D. V. Yurasov,Z. F. Krasilnik,Z. F. Krasilnik +17 more
TL;DR: In this article, metal-organic chemical vapor deposition (MOCVD) was used to grow in GaAs/GaAs/AlGaAs laser diodes with quantum wells on an exact Si (001) substrate with a Ge buffer layer.
Journal ArticleDOI
On the stimulated emission of InGaAs/GaAs/AlGaAs laser structures grown by MOCVD on exact and inclined Ge/Si(001) substrates
V. Ya. Aleshkin,V. Ya. Aleshkin,N. V. Baidus,Alexander A. Dubinov,Alexander A. Dubinov,Z. F. Krasilnik,Z. F. Krasilnik,S. M. Nekorkin,A. V. Novikov,A. V. Novikov,A. V. Rykov,D. V. Yurasov,D. V. Yurasov,Artem N. Yablonskiy +13 more
TL;DR: The threshold power densities of stimulated emission, observed for the structures grown on exact and inclined substrates are 45 and 37 kW/cm2, respectively as mentioned in this paper, for the GaAs/AlGaAs laser structures with InGaAs quantum wells are grown by metal-organic chemical vapor deposition (MOCVD) on exact Si(001) substrates and substrates inclined by 4° to the [011] axis with a relaxed Ge buffer layer.
Journal ArticleDOI
On the Application of Strain-Compensating GaAsP Layers for the Growth of InGaAs/GaAs Quantum-Well Laser Heterostructures Emitting at Wavelengths above 1100 nm on Artificial Ge/Si Substrates
N. V. Baidus,V. Ya. Aleshkin,Alexander A. Dubinov,Z. F. Krasilnik,K. E. Kudryavtsev,S. M. Nekorkin,A. V. Novikov,A. V. Rykov,D. G. Reunov,Mikhail Shaleev,Pavel A. Yunin,D. V. Yurasov +11 more
TL;DR: In this paper, InGaAs/GaAs quantum-well laser structures are grown by gas-phase epitaxy from organometallic compounds on GaAs substrates and artificial Ge/Si substrates based on Si(001) with an epitaxial metamorphic Ge layer.