D
D. V. Yurasov
Researcher at Russian Academy of Sciences
Publications - 76
Citations - 409
D. V. Yurasov is an academic researcher from Russian Academy of Sciences. The author has contributed to research in topics: Molecular beam epitaxy & Silicon. The author has an hindex of 9, co-authored 74 publications receiving 338 citations. Previous affiliations of D. V. Yurasov include N. I. Lobachevsky State University of Nizhny Novgorod.
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Journal ArticleDOI
Photonic Bound States in the Continuum in Si Structures with the Self-Assembled Ge Nanoislands
Sergey A. Dyakov,M. V. Stepikhova,Andrey Bogdanov,A. V. Novikov,D. V. Yurasov,Mikhail Shaleev,Z. F. Krasilnik,Sergei G. Tikhodeev,Nikolay A. Gippius +8 more
TL;DR: In this paper, the authors demonstrate that photoluminescence of Ge nanoislands in silicon photonic crystal slab with hexagonal lattice can be dramatically enhanced due to the involvement in the emission process of the bounds states in the continuum.
Journal ArticleDOI
Impact of growth and annealing conditions on the parameters of Ge/Si(001) relaxed layers grown by molecular beam epitaxy
D. V. Yurasov,D. V. Yurasov,A. I. Bobrov,V. M. Danil’tsev,A. V. Novikov,A. V. Novikov,D. A. Pavlov,E. V. Skorokhodov,Mikhail Shaleev,Pavel A. Yunin,Pavel A. Yunin +10 more
TL;DR: In this article, the influence of the threading dislocation density and surface roughness on the Ge layer thickness, annealing temperature and time, and the presence of a hydrogen atmosphere was investigated.
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Monolithically integrated InGaAs/GaAs/AlGaAs quantum well laser grown by MOCVD on exact Ge/Si(001) substrate
V. Ya. Aleshkin,V. Ya. Aleshkin,N. V. Baidus,Alexander A. Dubinov,Alexander A. Dubinov,A. G. Fefelov,Z. F. Krasilnik,Z. F. Krasilnik,K. E. Kudryavtsev,K. E. Kudryavtsev,S. M. Nekorkin,A. V. Novikov,A. V. Novikov,D. A. Pavlov,I. V. Samartsev,E. V. Skorokhodov,Mikhail Shaleev,A. A. Sushkov,Artem N. Yablonskiy,Pavel A. Yunin,D. V. Yurasov,D. V. Yurasov +21 more
TL;DR: In this article, the InGaAs/GAAs/AlGaAs quantum well laser was realized by metallorganic chemical vapor deposition on a virtual Ge-on-Si(001) substrate.
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Antimony segregation in Ge and formation of n-type selectively doped Ge films in molecular beam epitaxy
D. V. Yurasov,D. V. Yurasov,A. V. Antonov,A. V. Antonov,M. N. Drozdov,M. N. Drozdov,V. B. Schmagin,V. B. Schmagin,K. E. Spirin,A. V. Novikov,A. V. Novikov +10 more
TL;DR: In this paper, a quantitative dependence of the Sb segregation ratio in Ge(001) films grown by molecular beam epitaxy was revealed experimentally and modeled theoretically taking into account both the terrace-mediated and step-edge-mediated segregation mechanisms.
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Light emission from Ge(Si)/SOI self-assembled nanoislands embedded in photonic crystal slabs of various periods with and without cavities
M. V. Stepikhova,A. V. Novikov,Artem N. Yablonskiy,Mikhail Shaleev,D. E. Utkin,Viktoriia Rutckaia,E. V. Skorokhodov,Sergey M. Sergeev,D. V. Yurasov,Z. F. Krasilnik +9 more