A. V. Singh

TL;DR: In this article, high conducting and transparent aluminum-doped zinc oxide films were prepared on quartz and corning glass 7059 substrate by ablating the sintered ZnO target containing 2 wt % Al2O3 with a XeCl excimer laser.

TL;DR: In this article, the authors found that the lowest room temperature resistivity was 11.77 Ω cm with a hole density of 9.0×1016 cm−3 for the films deposited in 60% of oxygen partial pressure ratio.

TL;DR: In this paper, the doping mechanism in aluminum doped zinc oxide films has been interpreted by considering the relationship between Hall mobility and effective mass of electrons with carrier concentrations, both degeneracy and the nonparabolic nature of the conduction band are taken into account for determining the charge state of the dopant.

Abstract: Undoped and yttrium doped zinc oxide thin films have been deposited on coming glass by dip coating technique. The effect of doping (0-4 wt%) and annealing temperature (300-500 °C) on the structural, optical and electrical properties of the produced films have been investigated. All the films show polycrystalline nature at an annealing temperature of 350 °C. The preferential c-axis growth with lowest full width at half maximum of (002) reflection peak is seen only up to an optimum annealing temperature. A blue shift in the absorption edge is observed both, with increase in dopant concentration and annealing temperature. The electrical resistivity of the films decreases by doping with yttrium. The lowest resistivity of 3.5 x 10 -2 Q cm and an average transmittance of 86% in the visible range has been obtained in YZO films doped with 3 wt% of yttrium and annealed at 450 °C.

TL;DR: In this article, the structural, electrical and optical properties of Yttrium doped zinc oxide (YZO) thin films deposited on Corning (7059) glass substrates by spin coating technique were reported.