Showing papers by "Adrian Powell published in 2012"
Patent•
15 Oct 2012
TL;DR: In this article, a semiconductor crystal and associated growth method are disclosed, which includes a seed crystal and a growth portion on the seed crystal portion, and the growth portion forms a substantially upright cylindrical single crystal of silicon carbide.
Abstract: PROBLEM TO BE SOLVED: To solve the problems in a conventional technology for obtaining an off-axis wafer, wherein a larger crystal is generally oriented separately from a vertical line of the crystal, then, in order to produce an off-axis seed crystal, a wafer is cut toward the orientation direction, and orientation of the crystal in the separated state from the vertical line reduces a utilizable effective layer thickness because a wafer having the same size as the crystal is cut.SOLUTION: A semiconductor crystal and associated growth method are disclosed. The crystal includes a seed crystal portion and a growth portion on the seed crystal portion. The seed crystal portion and the growth portion form a substantially upright cylindrical single crystal of silicon carbide. A seed crystal face defines an interface between the growth portion and the seed crystal portion, with the seed crystal face being substantially parallel to the bases of the upright cylindrical crystal and being off-axis with respect to a basal plane of the single crystal. The growth portion replicates the polytype of the seed crystal portion and the growth portion has a diameter of at least about 100 mm.