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Ahmet Taş

Researcher at Mersin University

Publications -  14
Citations -  144

Ahmet Taş is an academic researcher from Mersin University. The author has contributed to research in topics: Bound state & Hypergeometric function. The author has an hindex of 6, co-authored 13 publications receiving 92 citations. Previous affiliations of Ahmet Taş include Harran University.

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Solutions of Schrödinger equation and thermal properties of generalized trigonometric Pöschl-Teller potential

TL;DR: In this paper, an analytical solution of the Schrodinger equation for the generalized trigonometric Poschl-Teller potential by using an appropriate approximation to the centrifugal term within the framework of the Functional Analysis Approach has been considered.
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Ro-vibrational energies of CO molecule via improved generalized Pöschl–Teller potential and Pekeris-type approximation

TL;DR: In this article, the improved generalized Poschl-Teller potential (GPT) has been introduced to discuss diatomic molecules and the Schrodinger equation has been solved for the improved GPT potential by applying a new Pekeris-type approximation to the centrifugal term, and then the rotational-vibrational energy eigenvalue equation was obtained.
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Dirac particles interacting with the improved Frost–Musulin potential within the effective mass formalism

TL;DR: In this article, the authors investigated the dynamics of spin-1 2 particles with position-dependent mass for the improved Frost-Musulin potential under spin-pseudospin symmetry.
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Bound and Scattering States Solution of the Relativistic Spinless Particles in View of the Multiparameter Potential

TL;DR: In this paper, the analytical solutions for both bound and scattering states of the Klein-Gordon equation with the multiparameter potential were explored, which describes atomic, diatomic and polyatomic molecular structures via the standard method by applying a Pekeris-type approximation to the centrifugal potential.
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Effects of PEDOT:PSS and crystal violet interface layers on current-voltage performance of Schottky barrier diodes as a function of temperature and variation of diode capacitance with frequency

TL;DR: In this paper , the I-V characteristics of Ni/PEDOT:PSS/CV/p-Si/Al diodes were investigated for different temperature values, and it was determined that the basic diode parameters are strongly dependent on temperature.