Journal ArticleDOI
Effects of PEDOT:PSS and crystal violet interface layers on current-voltage performance of Schottky barrier diodes as a function of temperature and variation of diode capacitance with frequency
Ali Rıza Deniz,Ahmet Taş,Zakir Çaldıran,Ümit Incekara,M. Biber,Sakir Aydogan,Abdulmecit Türüt +6 more
TLDR
In this paper , the I-V characteristics of Ni/PEDOT:PSS/CV/p-Si/Al diodes were investigated for different temperature values, and it was determined that the basic diode parameters are strongly dependent on temperature.About:
This article is published in Current Applied Physics.The article was published on 2022-04-01. It has received 6 citations till now. The article focuses on the topics: Diode & Equivalent series resistance.read more
Citations
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Journal ArticleDOI
Electrical Characteristics of Al2o3/P-Si Heterojunction Diode and Effects of Radiation on the Electrical Properties of this Diode
Journal ArticleDOI
Performance prediction of current-voltage characteristics of Schottky diodes at low temperatures using artificial intelligence
Tamer Güzel,Andaç Batur Çolak +1 more
TL;DR: In this paper , the performance of the artificial neural network model trained using high temperature data in predicting the current-voltage properties at low temperatures was investigated, and it was found that the currentvoltage characteristics of the Schottky diode at low temperature could be predicted with an error rate of approximately ±7 %.
Journal ArticleDOI
A novel thiophene-based D-π-A type organic material: Synthesis, characterization and Schottky diode applications
Musa Erdoğan,Zakir Çaldıran +1 more
TL;DR: In this article , a newly designed π-conjugated D-π-A type organic material, namely TPA-T-DCV 9, was synthesized in excellent yield by introducing triphenylamine as electron donor and dicyanovinyl unit attached to the benzene ring as electron acceptor at positions 3 and 4 of the central thiophene skeleton as πlinker.
Journal ArticleDOI
The electrical response of the Au/Mn2Mo6S8/p-Si diode under different physical stimuli
TL;DR: In this paper , the I-V characteristics of the Au/Mn 2 Mo 6 S 8 /p-Si photodiodes have been examined in the temperature range 100 −340 K based on I −V data.
Journal ArticleDOI
The Comparison of the Temperature Susceptibility of the Serial Resistance Effect of Au/n-GaAs Type M/S Structures
TL;DR: In this article , the temperature susceptibility of serial resistance (Rs) features of the Au/n-GaAs type M/S structure, which is acceptable the benchmark sample, was evaluated using the principal of Ohm, Norde, and Cheungs' functions.
References
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Journal ArticleDOI
Barrier inhomogeneities at Schottky contacts
TL;DR: In this article, a new analytical potential fluctuations model for the interpretation of current/voltage and capacitance/voltages measurements on spatially inhomogeneous Schottky contacts is presented.
Journal ArticleDOI
Electron transport at metal-semiconductor interfaces : general theory
TL;DR: Results suggest that the formation mechanism of the Schottky barrier is locally nonuniform at common, polycrystalline, metal-semiconductor interfaces.
Journal ArticleDOI
A modified forward I‐V plot for Schottky diodes with high series resistance
TL;DR: In this article, it was shown that a reliable value of the barrier height can be obtained even if there is a series resistance which would hamper the evaluation of the standard lnI•vs•V plot.
Journal ArticleDOI
Electron transport of inhomogeneous Schottky barriers: A numerical study
TL;DR: In this paper, the authors present numerical simulations of the potential distribution and current transport associated with metal-semiconductor contacts in which the Schottky barrier height (SBH) varies spatially.
Journal ArticleDOI
Graphene Schottky diodes: an experimental review of the rectifying graphene/semiconductor heterojunction
TL;DR: A review of the state-of-the art of the research on graphene/semiconductor junctions, the attempts towards a modeling and the most promising applications can be found in this article.
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A novel fabrication process and analytical model for Pt/GaAs Schottky barrier mixer diodes
Viktor Krozer,A. Grüb +1 more