Showing papers by "Aidong Li published in 1996"
TL;DR: In this paper, perovskite conductive LaNiO3 films, 250 nm thick, were prepared by metalorganic decomposition and Rutherford backscattering spectrometry was used to determine the film thickness and composition.
Abstract: Perovskite conductive LaNiO3 films, 250 nm thick, were prepared by metalorganic decomposition. Rutherford backscattering spectrometry was used to determine the film thickness and composition. The x‐ray diffraction patterns of LaNiO3 films indicated that the lowest temperature for crystallization is about 530 °C. The measurement of resistivity as a function of annealing temperatures showed that the good metallic conductive LaNiO3 films could be obtained at 550 °C. The films with the lowest resistivity (4.0×10−4 Ω cm) were obtained on quartz by annealing in oxygen at 700 °C.
85 citations
TL;DR: In this article, the trend of resistance as a function of annealing temperature of LNO films on STO and Si substrates was found to have lower crystalline temperature and higher transition temperature from conductor to insulator than on Si.
Abstract: Epitaxial metallic LaNiO3 (LNO) films on SrTiO3 (STO) were prepared by metalorganic decomposition. X‐ray θ–2θ scans, x‐ray φ scans, and the Rutherford backscattering channeling technique were used to determine the degree of crystallinity of the films. The trend of resistance as a function of annealing temperature of LNO films on STO and Si substrates indicated that LNO films on STO have lower crystalline temperature and higher transition temperature from conductor to insulator than on Si. (001)‐oriented PbTiO3 (PT) films were grown on LNO‐coated STO by the sol‐gel method. Scanning electron microscopy of a cross section of PT/LNO/STO showed sharp boundaries. The ferroelectric capacitor fabricated from these films displayed promising P‐E hysteresis characteristics.
33 citations