The detection of explosives is one of the current pressing concerns in global security. In the past few decades, a large number of emissive sensing materials have been developed for the detection of explosives in vapor, solution, and solid states through fluorescence methods. In recent years, great efforts have been devoted to develop new fluorescent materials with various sensing mechanisms for detecting explosives in order to achieve super-sensitivity, ultra-selectivity, as well as fast response time. This review article starts with a brief introduction on various sensing mechanisms for fluorescence based explosive detection, and then summarizes in an exhaustive and systematic way the state-of-the-art of fluorescent materials for explosive detection with a focus on the research in the recent 5 years. A wide range of fluorescent materials, such as conjugated polymers, small fluorophores, supramolecular systems, bio-inspired materials and aggregation induced emission-active materials, and their sensing performance and sensing mechanism are the centerpiece of this review. Finally, conclusions and future outlook are presented and discussed.

Fluorescence based explosive detection: from mechanisms to sensory materials.

Flexible and wearable electronics are attracting wide attention due to their potential applications in wearable human health monitoring and care systems. Carbon materials have combined superiorities such as good electrical conductivity, intrinsic and structural flexibility, light weight, high chemical and thermal stability, ease of chemical functionalization, as well as potential mass production, enabling them to be promising candidate materials for flexible and wearable electronics. Consequently, great efforts are devoted to the controlled fabrication of carbon materials with rationally designed structures for applications in next-generation electronics. Herein, the latest advances in the rational design and controlled fabrication of carbon materials toward applications in flexible and wearable electronics are reviewed. Various carbon materials (carbon nanotubes, graphene, natural-biomaterial-derived carbon, etc.) with controlled micro/nanostructures and designed macroscopic morphologies for high-performance flexible electronics are introduced. The fabrication strategies, working mechanism, performance, and applications of carbon-based flexible devices are reviewed and discussed, including strain/pressure sensors, temperature/humidity sensors, electrochemical sensors, flexible conductive electrodes/wires, and flexible power devices. Furthermore, the integration of multiple devices toward multifunctional wearable systems is briefly reviewed. Finally, the existing challenges and future opportunities in this field are summarized.

Advanced Carbon for Flexible and Wearable Electronics.

Nonvolatile memory technologies in Si-based electronics date back to the 1990s. Ferroelectric field-effect transistor (FeFET) was one of the most promising devices replacing the conventional Flash memory facing physical scaling limitations at those times. A variant of charge storage memory referred to as Flash memory is widely used in consumer electronic products such as cell phones and music players while NAND Flash-based solid-state disks (SSDs) are increasingly displacing hard disk drives as the primary storage device in laptops, desktops, and even data centers. The integration limit of Flash memories is approaching, and many new types of memory to replace conventional Flash memories have been proposed. Emerging memory technologies promise new memories to store more data at less cost than the expensive-to-build silicon chips used by popular consumer gadgets including digital cameras, cell phones and portable music players. They are being investigated and lead to the future as potential alternatives to existing memories in future computing systems. Emerging nonvolatile memory technologies such as magnetic random-access memory (MRAM), spin-transfer torque random-access memory (STT-RAM), ferroelectric random-access memory (FeRAM), phase-change memory (PCM), and resistive random-access memory (RRAM) combine the speed of static random-access memory (SRAM), the density of dynamic random-access memory (DRAM), and the nonvolatility of Flash memory and so become very attractive as another possibility for future memory hierarchies. Many other new classes of emerging memory technologies such as transparent and plastic, three-dimensional (3-D), and quantum dot memory technologies have also gained tremendous popularity in recent years. Subsequently, not an exaggeration to say that computer memory could soon earn the ultimate commercial validation for commercial scale-up and production the cheap plastic knockoff. Therefore, this review is devoted to the rapidly developing new class of memory technologies and scaling of scientific procedures based on an investigation of recent progress in advanced Flash memory devices.

/pdf/overview-of-emerging-nonvolatile-memory-technologies-1j483ed6lr.pdf

Overview of emerging nonvolatile memory technologies

As a non-toxic species, Zn fulfills a multitude of biological roles, but its promoting effect on electrocatalysis has been rarely explored. Herein, the theoretic predications and experimental investigations that nonelectroactive Zn behaves as an effective promoter for CoP-catalyzed hydrogen evolution reaction (HER) in both acidic and alkaline media is reported. Density function theory calculations reveal that Zn doing leads to more thermal-neutral hydrogen adsorption free energy and thus enhanced HER activity for CoP catalyst. Electrochemical tests show that a Zn0.08Co0.92P nanowall array on titanium mesh (Zn0.08Co0.92P/TM) needs overpotentials of only 39 and 67 mV to drive a geometrical catalytic current of 10 mA cm-2 in 0.5 m H2SO4 and 1.0 m KOH, respectively. This Zn0.08Co0.92P/TM is also superior in activity over CoP/TM for urea oxidation reaction (UOR), driving 115 mA cm-2 at 0.6 V in 1.0 m KOH with 0.5 m urea. The high HER and UOR activity of this bifunctional electrode enables a Zn0.08Co0.92P/TM-based two-electrode electrolyzer for energy-saving hydrogen production, offering 10 mA cm-2 at a low voltage of 1.38 V with strong long-term electrochemical stability.

Enhanced Electrocatalysis for Energy‐Efficient Hydrogen Production over CoP Catalyst with Nonelectroactive Zn as a Promoter

Flexible electronic devices are necessary for applications involving unconventional interfaces, such as soft and curved biological systems, in which traditional silicon-based electronics would confront a mechanical mismatch. Biological polymers offer new opportunities for flexible electronic devices by virtue of their biocompatibility, environmental benignity, and sustainability, as well as low cost. As an intriguing and abundant biomaterial, silk offers exquisite mechanical, optical, and electrical properties that are advantageous toward the development of next-generation biocompatible electronic devices. The utilization of silk fibroin is emphasized as both passive and active components in flexible electronic devices. The employment of biocompatible and biosustainable silk materials revolutionizes state-of-the-art electronic devices and systems that currently rely on conventional semiconductor technologies. Advances in silk-based electronic devices would open new avenues for employing biomaterials in the design and integration of high-performance biointegrated electronics for future applications in consumer electronics, computing technologies, and biomedical diagnosis, as well as human-machine interfaces.

Silk Fibroin for Flexible Electronic Devices

Silicon compatible wafer scale MoS2 heterojunctions are reported for the first time using colloidal quantum dots. Size dependent direct band gap emission of MoS2 dots are presented at room temperature. The temporal stability and decay dynamics of excited charge carriers in MoS2 quantum dots have been studied using time correlated single photon counting spectroscopy technique. Fabricated n-MoS2/p-Si 0D/3D heterojunctions exhibiting excellent rectification behavior have been studied for light emission in the forward bias and photodetection in the reverse bias. The electroluminescences with white light emission spectra in the range of 450–800 nm are found to be stable in the temperature range of 10–350 K. Size dependent spectral responsivity and detectivity of the heterojunction devices have been studied. The peak responsivity and detectivity of the fabricated heterojunction detector are estimated to be ~0.85 A/W and ~8 × 1011 Jones, respectively at an applied bias of −2 V for MoS2 QDs of 2 nm mean diameter. The above values are found to be superior to the reported results on large area photodetector devices fabricated using two dimensional materials.

/pdf/novel-colloidal-mos2-quantum-dot-heterojunctions-on-silicon-3ok08vi364.pdf

Novel Colloidal MoS2 Quantum Dot Heterojunctions on Silicon Platforms for Multifunctional Optoelectronic Devices.

The growing demand for biomaterials for electrical and optical devices is motivated by the need to make building blocks for the next generation of printable bio-electronic devices. In this study, transparent and flexible resistive memory devices with a very high ON/OFF ratio incorporating gold nanoparticles into the Bombyx mori silk protein fibroin biopolymer are demonstrated. The novel electronic memory effect is based on filamentary switching, which leads to the occurrence of bistable states with an ON/OFF ratio larger than six orders of magnitude. The mechanism of this process is attributed to the formation of conductive filaments through silk fibroin and gold nanoparticles in the nanocomposite. The proposed hybrid bio-inorganic devices show promise for use in future flexible and transparent nanoelectronic systems.

https://iopscience.iop.org/article/10.1088/0957-4484/24/34/345202/pdf

Transparent and flexible resistive switching memory devices with a very?high ON/OFF ratio using gold nanoparticles embedded in a silk protein matrix

Graphene with an exceptional combination of electronic, optical and outstanding mechanical features has been proved to lead a completely different kind of 2-D electronics. The most exciting feature of graphene is its ultra-thin thickness, that can be conformally contacted to any kind of rough surface without losing much of its transparency and conductivity. Graphene has been explored demonstrating various prototype flexible electronic applications, however, its potentiality has been proven wherever transparent conductive electrodes (TCEs) are needed in a flexible, stretchable format. Graphene-based TCEs in flexible electronic applications showed greatly superior performance over their conventionally available competitor indium tin oxide (ITO). Moreover, enormous applications have been emerging, especially in wearable devices that can be potentially used in our daily life as well as in biomedical areas. However, the production of high-quality, defect-free large area graphene is still a challenge and the main hurdle in the commercialization of flexible and wearable products. The objective of the present review paper is to summarize the progress made so far in graphene-based flexible and wearable applications. The current developments including challenges and future perspectives are also highlighted.

https://iopscience.iop.org/article/10.1088/1674-4926/39/1/011007/pdf

Graphene-based flexible and wearable electronics *

Remarkable progress has been made in the field of one-dimensional semiconductor nanostructures for electronic and photonic devices. Group-IV semiconductors and their heterostructures have dominated the years of success in microelectronic industry. However their use in photonic devices is limited since they exhibit poor optical activity due to indirect band gap nature of Si and Ge. Reducing their dimensions below a characteristic length scale of various fundamental parameters like exciton Bohr radius, phonon mean free path, critical size of magnetic domains, exciton diffusion length etc result in the significant modification of bulk properties. In particular, light emission from Si/Ge nanowires due to quantum confinement, strain induced band structure modification and impurity doping may lead to the integration of photonic components with mature silicon CMOS technology in near future. Several promising applications based on Si and Ge nanowires have already been well established and studied, while others are now at the early demonstration stage. The control over various forms of energy and carrier transport through the unconstrained dimension makes Si and Ge nanowires a promising platform to manufacture advanced solid-state devices. This review presents the progress of the research with emphasis on their potential application of Si/Ge nanowires and their heterostructures for electronic, photonic, sensing and energy devices.

https://iopscience.iop.org/article/10.1088/1361-6528/aa565c/pdf

One-dimensional Si/Ge nanowires and their heterostructures for multifunctional applications-a review.

In this study, three novel luminescent nanofibrous metal–organic gels (MOGs) have been synthesized by the reaction of 1,3,5-tris(3-pyridylmethoxyl)benzene (L) with chloride salts of Cd(II), Hg(II), and Cu(II). The metal–ligand coordination, intermolecular π–π stacking and several other weak interactions found to play an important role in the formation of nanofibrous materials. The gel materials are characterized by rheology, diffuse reflectance spectra and various microscopic techniques such as TEM, FESEM, and AFM. The gels MOG-1 and MOG-2 were found to exhibit significant white photoluminescence, whereas the MOG-3 exhbits green emission upon excitation at 325 nm. Furthermore, the MOG-1 has shown its application as a chemosensor for the remarkable detection of nitroaromatics such as nitrobenzene (NB), 2,4-dinitrophenol (DNP). The significant quenching response for NB and DNP is attributed to the strong charge-transfer interactions between the electron-deficient aromatic ring of NB and the electron rich ar...

Ajit K. Katiyar

Papers

Novel Colloidal MoS2 Quantum Dot Heterojunctions on Silicon Platforms for Multifunctional Optoelectronic Devices.

Transparent and flexible resistive switching memory devices with a very?high ON/OFF ratio using gold nanoparticles embedded in a silk protein matrix

Graphene-based flexible and wearable electronics *

One-dimensional Si/Ge nanowires and their heterostructures for multifunctional applications-a review.

Multifunctional White-Light-Emitting Metal–Organic Gels with a Sensing Ability of Nitrobenzene