Akihiro Itoh

TL;DR: In this article, a semiconductor light-emitting device has a layer containing Al between a substrate and an active layer containing nitrogen, wherein Al and oxygen are removed from a growth chamber before growing the active layer and a concentration of oxygen incorporated into said active layer together with Al is set to a level such that the semiconductor can perform a continuous laser oscillation at room temperature.

TL;DR: In this paper, a surface-emission laser diode includes a distributed Bragg reflector tuned to wavelength of 1.1 μm or longer, where the Bragg reflectsor includes an alternate repetition of a low-refractive index layer and a high-reflective index layer, with a heterospike buffer layer having an intermediate refractive index interposed therebetween with a thickness in the range of 5-50 nm.

TL;DR: In this article, a vertical-cavity, surface-emission-type laser diode includes an optical cavity formed of an active region sandwiched by upper and lower reflectors, wherein the lower reflector is formed of a distributed Bragg reflector and a non-optical recombination elimination layer is provided between an active layer in the active region and the lower one.

TL;DR: A surface-emission laser diode includes a GaAs substrate, a cavity region, and upper and lower reflectors provided at a top part and a bottom part of the cavity region.

TL;DR: In this article, a surface-emission laser array comprises a plurality of surface emission laser diode elements arranged in the form of a two-dimensional array, where a line drawn perpendicularly to a straight line extending in a first direction from respective centers of the plurality of surfaces emitting laser diod elements aligned in a second direction perpendicular to the first direction, are formed with generally equal interval in first direction.