S
Shunichi Sato
Researcher at Ricoh
Publications - 221
Citations - 2383
Shunichi Sato is an academic researcher from Ricoh. The author has contributed to research in topics: Laser & Layer (electronics). The author has an hindex of 28, co-authored 221 publications receiving 2381 citations. Previous affiliations of Shunichi Sato include Casio.
Papers
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Patent
Semiconductor light-emitting device, surface-emission laser diode, and production apparatus thereof, production method, optical module and optical telecommunication system
TL;DR: In this article, a semiconductor light-emitting device has a layer containing Al between a substrate and an active layer containing nitrogen, wherein Al and oxygen are removed from a growth chamber before growing the active layer and a concentration of oxygen incorporated into said active layer together with Al is set to a level such that the semiconductor can perform a continuous laser oscillation at room temperature.
Patent
Surface-emission laser diode operable in the wavelength band of 1.1-1.7 micrometers and optical telecommunication system using such a laser diode
Naoto Jikutani,Shunichi Sato,Takashi Takahashi,Akihiro Itoh,Takuro Sekiya,Akira Sakurai,Masayoshi Katoh,Furuta Teruyuki,Kazuya Miyagaki,Ken Kanai,Atsuyuki Watada,Koei Suzuki,Satoru Sugawara,Shinji Satoh,Shuuichi Hikichi +14 more
TL;DR: In this paper, a surface-emission laser diode includes a distributed Bragg reflector tuned to wavelength of 1.1 μm or longer, where the Bragg reflectsor includes an alternate repetition of a low-refractive index layer and a high-reflective index layer, with a heterospike buffer layer having an intermediate refractive index interposed therebetween with a thickness in the range of 5-50 nm.
Patent
Light emitting devices with layered III-V semiconductor structures
TL;DR: In this paper, a semiconductor light emitting device with an active region comprising a straggled quantum well layer and a cladding layer for confining carriers and light emissions is described.
Patent
Surface-emitting laser diode having reduced device resistance and capable of performing high output operation, surface-emitting laser diode array, electrophotographic system, surface-emitting laser diode module, optical telecommunication system, optical interconnection system using the surface-emitting laser diode, and method of fabricating the surface-emitting laser diode
TL;DR: In this paper, a surface-emitting laser diode device with an active layer, a hole passage and a hole restricting structure is presented. But the area of the non-oxide region is smaller than the hole restricting region.
Journal ArticleDOI
Continuous wave operation of 1.26 [micro sign]m GaInNAs/GaAs vertical-cavity surface-emitting lasers grown by metalorganic chemical vapour deposition
Shunichi Sato,Nobuhiko Nishiyama,Tomoyuki Miyamoto,T. Takahashi,N. Jikutani,Masakazu Arai,Akihiro Matsutani,Fumio Koyama,Kenichi Iga +8 more
TL;DR: In this paper, a 10/spl times/10 /spl mu/m/sup 2/ oxide aperture device was demonstrated for the first time and the output power exceeded 0.1 mW and the slope efficiency was /spl sim/0.1 W/A.