A solid-state image-sensing device has a photosensitive element that produces an electric signal commensurate with the amount of light incident thereon, a transistor of which the first electrode and the control electrode are connected to one electrode of the photosensitive element, and a resetting portion for resetting the transistor by feeding a predetermined pulse signal to the second electrode of the transistor The resetting portion resets the transistor in such a way as to inhibit the transistor from operating in a subthreshold region when the amount of light incident on the photosensitive element is below a predetermined level

Solid-state image-sensing device

A color solid-state imaging apparatus of the present invention, includes a plurality of pixels conducting photoelectric conversion arranged in a matrix and color filters disposed so as to correspond to the plurality of pixels, wherein the color filters include first filters of a first kind, second filters of a second kind, and third filters of a third kind having spectral characteristics different from each other, the plurality of pixels are arranged at a pitch L in a first direction to form rows, and each of the rows is arranged at a pitch M/2 in a second direction orthogonal to the first direction, the pixels disposed in even-number rows are shifted in the first direction by L/2 from the corresponding pixels disposed in odd-number rows, the first filters are disposed so as to correspond to all the pixels arranged in the odd-number rows, the second filters are disposed so as to correspond to a half of the pixels arranged in the even-number rows at a predetermined period, and the third filters are disposed so as to correspond to the remaining pixels in the even-number rows.

Color solid-state imaging apparatus

A semiconductor device includes a via structure and a conductive structure. The via structure has a surface with a planar portion and a protrusion portion. The conductive structure is formed over at least part of the planar portion and not over at least part of the protrusion portion of the via structure. For example, the conductive structure is formed only onto the planar portion and not onto any of the protrusion portion for forming high quality connection between the conductive structure and the via structure.

Semiconductor Device and Method of Fabricating the Same

This 256/spl times/256 active pixel sensor (APS) is designed for consumer multimedia applications requiring low-cost, high-functionality, compact cameras capable of acquiring high-quality images at video frame rates. This sensor allows random access of the image data, permitting a simple implementation of electronic pan and zoom. Use in portable equipment is simplified by standard operating voltages and low power (80mW@5V, 20mW@3.3V). Fabrication in a standard CMOS process allows the integration of a variety of new and existing digital circuits with the image sensor. In addition, by making use of the implicit dynamic frame buffer provided by the active pixel structure, the sensor can generate a signal that represents the difference between sequential frames. This may be used for motion detection, image stabilization, and compression purposes.

A 256/spl times/256 CMOS active pixel image sensor with motion detection

The performance of a color CMOS photogate image sensor is reported. It is shown that by using two levels of correlated-double sampling it is possible to effectively cancel all fixed-pattern noise due to read-out circuit mismatch. Instead the fixed-pattern noise performance of the sensor is limited by dark current nonuniformity at low signal levels, and conversion gain nonuniformity at high signal levels. It is further shown that the imaging performance of the sensor is comparable to low-end CCD sensors but inferior to that reported for high-end CCD sensors due to low quantum efficiency, high dark current, and pixel cross-talk. As such the performance of CMOS sensors is limited at the device level rather than at the architectural level. If the imaging performance issues can be addressed at the fabrication process level without increasing cost or degrading transistor performance, CMOS has the potential to seriously challenge CCD as the solid-state imaging technology of choice due to low power dissipation and compatibility with camera system integration.

Performance analysis of a color CMOS photogate image sensor

A charge-coupled device has a multi-layer structure insulating layer is formed beneath a transfer electrode, floating electrodes and an electrode adjacent the floating electrodes so that pin hole phenomenon in a charge transfer section of the charge coupled device can be successfully prevented. On the other hand, a sole-layer structure insulating layer is formed beneath a gate electrode of a peripheral component so that a threshold voltage of the gate electrode of the peripheral component can be successfully controlled at a desired value.

Charge-coupled device and process of fabrication thereof

In a CCD solid state image sensing device in which a photo-sensitive section is constructed by a photodiode formed by a PN junction between a first P-type well region and an N-type impurity diffusion region formed on an N-type silicon substrate, the N-type impurity diffusion region is formed by the ion implantation of single substance of arsenic (As). According to this CCD solid state image sensing device, a bright flaw on an image sensing screen, which is one of the defects encountered with an image sensing screen, can be reduced. Also, the n-type impurity diffusion region constructing the PN junction can be reduced in size and the CCD solid state image sensing device itself can be made compact in size. Further, a method of manufacturing a CCD solid state image sensing device also is provided.

Method of manufacturing a CCD solid state image sensing device

In a CCD solid state image sensing device in which a photosensitive section is constructed by a photodiode formed by a PN junction between a first P-type well region and an N-type impurity diffusion region formed on an N-type silicon substrate, the N-type impurity diffusion region is formed by the ion implantation of single substance of arsenic (As). According to this CCD solid state image sensing device, a bright flaw on an image sensing screen, which is one of the defects encountered with an image sensing screen, can be reduced. Also, the n-type impurity diffusion region constructing the PN Junction can be reduced in size and the CCD solid state image sensing device itself can be made compact in size. Further, a method of manufacturing a CCD solid state image sensing device also is provided.

CCD solid state image device which has a semiconductor substrate with a P-type region with an N-type region formed therein by injection of arsenic

In a CCD solid state image sensing device in which a photosensitive section is constructed by a photodiode formed by a PN junction between a first P-type well region and an N-type impurity diffusion region formed on an N-type silicon substrate, the N-type impurity diffusion region is formed by the ion implantation of single substance of arsenic (As). According to this CCD solid state image sensing device, a bright flaw on an image sensing screen, which is one of the defects encountered with an image sensing screen, can be reduced. Also, the n-type impurity diffusion region constructing the PN junction can be reduced in size and the CCD solid state image sensing device itself can be made compact in size. Further, a method of manufacturing a CCD solid state image sensing device also is provided.

Method of making CCD solid state image sensing device

A progressive-scan interline-transfer CCD (charge coupled device) image sensor (PS-CCD) that can read out vertical signal packets without mixing is presented. It can solve ill-matched resolutions. This 380-k-pixel PS-CCD provides a vertical resolution of 480 TV lines. The schematic of this device is shown. The image area is 6.45 (H) mm*4.84 (V) mm. The number of pixels without optical blacks is 768 (H) *494 (V), and the size is 8.4 (H) mu m*9.8 (V) mu m. These specifications are suitable for 1/2-in lens format. To realize a PS-CCD, three techniques are used: three-phase three-level electrode vertical CCD, dual horizontal CCD with a compound channel, and dual-channel output. The characteristics of the image sensor are shown. 146-mV/1* sensitivity is obtained from one pixel for light with a color temperature of 3200 K and a saturation voltage of 600 mV. Smear is reduced to -86 dB. Horizontal resolution is 570 TV lines. >

Akio Izumi

Papers

Charge-coupled device and process of fabrication thereof

Method of manufacturing a CCD solid state image sensing device

CCD solid state image device which has a semiconductor substrate with a P-type region with an N-type region formed therein by injection of arsenic

Method of making CCD solid state image sensing device

A 1/2-in 380 k-pixel progressive scan CCD image sensor