A solid-state image-sensing device has a photosensitive element that produces an electric signal commensurate with the amount of light incident thereon, a transistor of which the first electrode and the control electrode are connected to one electrode of the photosensitive element, and a resetting portion for resetting the transistor by feeding a predetermined pulse signal to the second electrode of the transistor The resetting portion resets the transistor in such a way as to inhibit the transistor from operating in a subthreshold region when the amount of light incident on the photosensitive element is below a predetermined level

Solid-state image-sensing device

An object is to provide a method for manufacturing a semiconductor device, in which the number of photolithography steps can be reduced, the manufacturing process can be simplified, and manufacturing can be performed with high yield at low cost A method for manufacturing a semiconductor device includes the following steps: forming a semiconductor film; irradiating a laser beam by passing the laser beam through a photomask including a shield for shielding the laser beam; subliming a region which has been irradiated with the laser beam through a region in which the shield is not formed in the photomask in the semiconductor film; forming an island-shaped semiconductor film in such a way that a region which is not irradiated with the laser beam is not sublimed because it is a region in which the shield is formed in the photomask; forming a first electrode which is one of a source electrode and a drain electrode and a second electrode which is the other one of the source electrode and the drain electrode; forming a gate insulating film; and forming a gate electrode over the gate insulating film

Method for Manufacturing Semiconductor Device

Devices, systems and methods provide passive patient monitoring of such parameters as body motion, body position, respiratory rate and/or heart rate. Passive monitoring generally involves a sensor device having at least two piezoelectric sensors, provided on a surface, such as a bed, chair, operating table or the like, so that a patient may be coupled with the device by simply allowing the patient to lie, sit, lean, stand on or wear the surface. In one embodiment, multiple patients in a general care area of a hospital may be continuously monitored via multiple passive monitoring devices. If a patient fails to meet one or more predefined threshold criteria or has a negative physiological trend, the system may activate an alarm.

Device and method for passive patient monitoring

In one aspect, the present invention is a sensor unit for sensing process parameters of a process to manufacture an integrated circuit using integrated circuit processing equipment. In one embodiment, the sensor unit includes a substrate having a wafer-shaped profile and a first sensor, disposed on or in the substrate, to sample a first process parameter. The sensor unit of this embodiment also includes a second sensor, disposed on or in the substrate, to sample a second process parameter wherein the second process parameter is different from the first process parameter. In one embodiment, the sensor unit includes a first source, disposed on or in the substrate, wherein first source generates an interrogation signal and wherein the first sensor uses the interrogation signal from the first source to sample the first process parameter. The sensor unit may also include a second source, disposed on or in the substrate, wherein second source generates an interrogation signal and wherein the second sensor uses the interrogation signal from the second source to sample the second process parameter. The first sensor and the first source may operate in an end-point mode or in a real-time mode. In this regard, the first sensor samples the first parameter periodically or continuously while the sensor unit is disposed in the integrated circuit processing equipment and undergoing processing. In one embodiment, the first sensor is a temperature sensor and the second sensor is a pressure sensor, a chemical sensor, a surface tension sensor or a surface stress sensor.

Method and apparatus for monitoring integrated circuit fabrication

A semiconductor device includes a via structure and a conductive structure. The via structure has a surface with a planar portion and a protrusion portion. The conductive structure is formed over at least part of the planar portion and not over at least part of the protrusion portion of the via structure. For example, the conductive structure is formed only onto the planar portion and not onto any of the protrusion portion for forming high quality connection between the conductive structure and the via structure.

Semiconductor Device and Method of Fabricating the Same

In a semiconductor wafer according to this invention, an epitaxial layer is formed on the surface of a semiconductor substrate, a second element which is not the same but homologous as a first element constituting the semiconductor substrate is present to have a peak concentration on the semiconductor substrate side rather than the surface, and this peak concentration is 1×10 16 atoms/cm 3 or more.

Semiconductor wafer and method of manufacturing same

Semiconductor wafer for epitaxially grown devices having a sub-surface getter region

PROBLEM TO BE SOLVED: To provide a solid-state image pickup device and a method of manufacturing the same, which can provide a good quality of image over the entire screen by improving the shading characteristic and reducing smear and also provide a camera having this solid-state image pickup device. SOLUTION: The solid-state image pickup device 1 consists of an asymmetrical in-layer lens 9 on a sensor section 2. First, dummy patterns 14 are formed between pixels, and then a reflow film 7 is formed to cover the dummy patterns 14. After reflowing the reflow film 7 by heat treatment, the in-layer lens 9 is formed on the reflow processed film 7 to manufacture the solid-state image pickup device 1. Then, the camera provided with the solid-state image pickup device 1 having the asymmetrical in-layer lens 9 is constituted.

Solid-state image pickup device and method of manufacturing the same, and camera

PURPOSE: To manufacture a semiconductor substrate, with which impurities and a crystal defect can be heavily subjected to gettering and also the gettering power can be maintained for a long period of time. CONSTITUTION: A carbon implantation region 15 is formed by ion-implanting carbon 14 into a CZ substrate 11 which is an Si substrate having an oxygen density of 1.5×10 18 atom.cm -3 . An Si epitaxial layer 16 is formed on the above- mentioned CZ substrate 11, and an epitaxial substrate 17 is completed. A high density crystal defect is formed in such a manner that the deposition of oxygen is accelerated by the ion-implanted carbon 14, and this crystal defect becomes a gettering site. Also, stress is generated by the difference in covalent linkage radius between Si and carbon 14, and this stress itself becomes the gettering site. COPYRIGHT: (C)1994,JPO

Semiconductor substrate and solid-state image-pickup device and manufacture thereof

In a CCD solid state image sensing device in which a photo-sensitive section is constructed by a photodiode formed by a PN junction between a first P-type well region and an N-type impurity diffusion region formed on an N-type silicon substrate, the N-type impurity diffusion region is formed by the ion implantation of single substance of arsenic (As). According to this CCD solid state image sensing device, a bright flaw on an image sensing screen, which is one of the defects encountered with an image sensing screen, can be reduced. Also, the n-type impurity diffusion region constructing the PN junction can be reduced in size and the CCD solid state image sensing device itself can be made compact in size. Further, a method of manufacturing a CCD solid state image sensing device also is provided.

Masanori Ohashi

Papers

Semiconductor wafer and method of manufacturing same

Semiconductor wafer for epitaxially grown devices having a sub-surface getter region

Solid-state image pickup device and method of manufacturing the same, and camera

Semiconductor substrate and solid-state image-pickup device and manufacture thereof

Method of manufacturing a CCD solid state image sensing device