A 1.5-GHz low noise amplifier (LNA), intended for use in a global positioning system (GPS) receiver, has been implemented in a standard 0.6-/spl mu/m CMOS process. The amplifier provides a forward gain (S21) of 22 dB with a noise figure of only 3.5 dB while drawing 30 mW from a 1.5 V supply. In this paper, we present a detailed analysis of the LNA architecture, including a discussion on the effects of induced gate noise in MOS devices.

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A 1.5-V, 1.5-GHz CMOS low noise amplifier

The theory for a sensitive spectroscopy based on the photothermal deflection of a laser beam is developed. We consider cw and pulsed cases of both transverse and collinear photothermal deflection spectroscopy for solids, liquids, gases, and thin films. The predictions of the theory are experimentally verified, its implications for imaging and microscopy are given, and the sources of noise are analyzed. The sensitivity and versatility of photothermal deflection spectroscopy are compared with thermal lensing and photoacoustic spectroscopy.

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Photothermal deflection spectroscopy and detection

This paper analyzes the small signal ac impedance of electron diffusion and recombination in a spatially restricted situation with application in systems such as porous TiO2 nanostructured photoelectrodes and intrinsically conducting polymers. It is shown that the diffusion−recombination model with the main types of boundary conditions assumes a finite set of possible behaviors in the frequency domain, which are classified according to relevant physical parameters. There are four possible cases:  (i) the impedance of finite diffusion with reflecting boundary, (ii) the impedance of finite diffusion with absorbing boundary, (iii) the impedance of diffusion-reaction in semiinfinite space or Gerischer impedance, and (iv) the impedance that combines Warburg response at high frequency and a reaction arc at low frequency. The generality of the approach is discussed in terms of the spatial distribution of the electrochemical potential or quasi-Fermi level and also in terms of the transmission line representation....

Theory of the Impedance of Electron Diffusion and Recombination in a Thin Layer

This review presents an overview of the thermal properties of mesoscopic structures. The discussion is based on the concept of electron energy distribution, and, in particular, on controlling and probing it. The temperature of an electron gas is determined by this distribution: refrigeration is equivalent to narrowing it, and thermometry is probing its convolution with a function characterizing the measuring device. Temperature exists, strictly speaking, only in quasiequilibrium in which the distribution follows the Fermi-Dirac form. Interesting nonequilibrium deviations can occur due to slow relaxation rates of the electrons, e.g., among themselves or with lattice phonons. Observation and applications of nonequilibrium phenomena are also discussed. The focus in this paper is at low temperatures, primarily below $4\phantom{\rule{0.3em}{0ex}}\mathrm{K}$, where physical phenomena on mesoscopic scales and hybrid combinations of various types of materials, e.g., superconductors, normal metals, insulators, and doped semiconductors, open up a rich variety of device concepts. This review starts with an introduction to theoretical concepts and experimental results on thermal properties of mesoscopic structures. Then thermometry and refrigeration are examined with an emphasis on experiments. An immediate application of solid-state refrigeration and thermometry is in ultrasensitive radiation detection, which is discussed in depth. This review concludes with a summary of pertinent fabrication methods of presented devices.

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Opportunities for mesoscopics in thermometry and refrigeration: Physics and applications

An inconsistency between commonly used values of the silicon intrinsic carrier concentration, the effective densities of states in the conduction and valence bands, and the silicon band gap is resolved by critically assessing the relevant literature. As a result of this assessment, experimentally based values for the valence‐band ‘‘densities‐of‐states’’ effective mass are determined in the 300–500 K range and are shown to be in good agreement with recent theoretical calculations. At 300 K, experimentally based values of 3.1×1019 cm−3 for the valence‐band effective densities of states and 1.08×1010 cm−3 for the intrinsic carrier concentration are determined. Although in good agreement with theoretical calculations, these are significantly higher and lower, respectively, than commonly used values in the past. These results have important implications in the calculation of other silicon material and device parameters.

Intrinsic concentration, effective densities of states, and effective mass in silicon

Mathematical Methods Noise Characterization Noise Measurements Thermal Noise Shot Noise Generation - Recombination Noise Flicker Noise or 1/f Noise Noise in Particular Amplifier Circuits Mixers Miscellaneous Problems Appendixes Index.

Aldert van der Ziel

Papers

Noise in solid state devices and circuits

Solid state physical electronics

Noise in measurements

Nonlinear Electronic Circuits