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Showing papers by "Aleksandra Drygała published in 2019"


Journal ArticleDOI
TL;DR: In this article, the electrical conductivity, electromagnetic interference shielding and microwave absorption properties of epoxy composites containing magnetite nanoparticles and modified electrochemically exfoliated graphite (mEEG) were described.

24 citations


Journal ArticleDOI
TL;DR: In this article, two types of photoelectrodes, containing TiO2 nanoparticles and a nanoparticle/nanowire system, have been produced with use electrospinning method.

18 citations


Journal ArticleDOI
TL;DR: In this paper, the influence of selective laser sintering of front metallization that was manufactured using paste based on silver nanopowder on contact resistant polycrystalline silicon solar cells was investigated by scanning electron microscope and confocal laser scanning microscope.
Abstract: The laser technology in the manufacturing of solar cells has become an indispensable element of modern photovoltaic technology. The main reason for taking up such research is because conventional methods used for monocrystalline silicon texturization are ineffective when applied to polycrystalline silicon texturing. This is related to random distribution of grains of different crystalographic orientations on the surface of polycrystalline silicon. Texturing a polycrystalline silicon surface using an Nd:YAG laser makes it possible to increase absorption of the incident solar radiation. The additional technological operation of etching in potassium hydroxide solution introduced into the technology of the photovoltaic cells manufactured from laser-textured wafers allows for improvement in electrical performance compared with cells produced from nontextured wafers. Moreover, this article presents the influence of selective laser sintering of front metallization that was manufactured using paste based on silver nanopowder on contact resistant. The electrodes were formed on monocrystalline silicon solar cells. The microstructures of laser-textured silicon and sintered front metallization were investigated by scanning electron microscope and confocal laser scanning microscope. The reflectance of produced textures was measured by spectrophotometer with an integrating sphere. Current-voltage characteristics of solar cells manufactured from laser-textured polycrystalline silicon wafer were measured under standard AM 1.5 radiation. The contact resistance between the metal and semiconductor was investigated using the transmission line model.

4 citations


Journal ArticleDOI
TL;DR: In this paper, a comparison and analysis of the electrical parameters of two kinds of silicon solar cells (mono-and multicrystalline) of different emitter resistance was performed.
Abstract: The purpose of this study was the comparison and analysis of the electrical parameters of two kinds of silicon solar cells (mono- and multicrystalline) of different emitter resistance.,By controlling of diffusion parameters, silicon mono- (Cz-Si) and multicrystalline (mc-Si) solar cells with different emitter resistance values were produced – 22 and 48 Ω/□. On the basis of current-voltage measurements of cells and contact resistance mapping, the properties of final solar cells based on two different materials were compared. Additionally, the influence of temperature on PV cells efficiency and open circuit voltage (Uoc) were investigated. The PC1D simulation was useful to determine spectral dependence of external quantum efficiency of solar cells with different emitter resistance. The silicon solar cells of 25 cm2 area and 240 µm thickness were investigated.,Considering the all stages of cell technology, the best structure is silicon solar cell with sheet resistance (Rsheet) of 45-48 Ω/□. Producing of an emitter with this resistance allowed to obtain cells with a fill factor between 0.725 and 0.758, Uoc between 585 and 612 mV, short circuit current (Isc) between 724 and 820 mA.,Measurements and analysis confirmed that mono- and multicrystalline silicon solar cells with 48 Ω/□ emitter resistance have better parameters than cells with Rsheet of 22 Ω/□. The contact resistance is the highest for mc-Si with Rsheet of 48 Ω/□ and reaches the value 3.8 Ωcm.