Alex Zamora

TL;DR: In this article, the first terahertz integrated circuit amplifier based on 25-nm InP high electron mobility transistor (HEMT) process was demonstrated at 1 GHz with 9-dB measured gain at 1.5 GHz.

TL;DR: In this article, a 25-nm InP HEMT-based InP-based receiver for submillimeter wave (QoW) was presented, and the receiver obtains the lowest reported noise figure for a transistorbased receiver operating at this frequency (<10.3 dB), while consuming a total dc power of only 1.8 W.

TL;DR: In this article, a set of Indium Phosphide (InP) MMICs for receivers at 240, 310, 380 and 670 GHz with significantly lower noise than previously reported.

TL;DR: InP MMIC technology has been scaled to 25-nm gate length transistors, enabling demonstration of low-noise amplifiers with sufficient gain at frequencies up to 1 THz as discussed by the authors.

TL;DR: In this paper, a transistor-based direct-detection receiver for submillimeter-wave applications is presented, which exhibits a noise figure of 11.4 dB with a total dc power consumption of 0.25 W.