Showing papers by "Alexander A. Lebedev published in 1989"
TL;DR: In this article, a combination of slow-heating, slow-cooling and using polished float-zone Si and phosphorous silicon oxide glass layers for gettering the thermal defects was used to fabricate devices with an ideal blocking capability.
Abstract: Using N-type silicon wafers ( ϱ ∼ 1.7–2 k Ω cm , 40 mm diameter and 3.5 mm thickness) P−N junctions with a breakdown voltage exceeding 20 kV have been manufactured. Applying a combination of slow-heating, slow-cooling and using polished float-zone Si and phosphorous silicon oxide glass layers for gettering the thermal defects, it was possible to avoid a change in resistivity of the n-layer and to fabricate devices with an ideal blocking capability.
2 citations