Showing papers by "Amandine Bellec published in 2022"

Negative Differential Resistance in Spin-Crossover Molecular Devices.

Abstract: We demonstrate, based on low-temperature scanning tunneling microscopy (STM) and spectroscopy, a pronounced negative differential resistance (NDR) in spin-crossover (SCO) molecular devices, where a FeII SCO molecule is deposited on surfaces. The STM measurements reveal that the NDR is robust with respect to substrate materials, temperature, and the number of SCO layers. This indicates that the NDR is intrinsically related to the electronic structure of the SCO molecule. Experimental results are supported by density functional theory (DFT) with nonequilibrium Green's function (NEGF) calculations and a generic theoretical model. While the DFT+NEGF calculations reproduce NDR for a special atomically sharp STM tip, the effect is attributed to the energy-dependent tip density of states rather than the molecule itself. We, therefore, propose a Coulomb blockade model involving three molecular orbitals with very different spatial localization as suggested by the molecular electronic structure.

Identification and Manipulation of Defects in Black Phosphorus.

Abstract: We identify and manipulate commonly occurring defects in black phosphorus, combining scanning tunneling microscopy experiments with density functional theory calculations. A ubiquitous defect, imaged at negative bias as a bright dumbbell extending over several nanometers, is shown to arise from a substitutional Sn impurity in the second sublayer. Another frequently observed defect type is identified as arising from an interstitial Sn atom; this defect can be switched to a more stable configuration consisting of a Sn substitutional defect + P adatom, by application of an electrical pulse via the STM tip. DFT calculations show that this pulse-induced structural transition switches the system from a non-magnetic configuration to a magnetic one. We introduce States Projected Onto Individual Layers (SPOIL) quantities which provide information about atom-wise and orbital-wise contributions to bias-dependent features observed in STM images.

Visualizing In‐Plane Junctions in Nitrogen‐Doped Graphene

Abstract: Controlling the spatial distribution of dopants in graphene is the gateway to the realization of graphene‐based electronic components. Here, it is shown that a submonolayer of self‐assembled physisorbed molecules can be used as a resist during a post‐synthesis nitrogen doping process to realize a nanopatterning of nitrogen dopants in graphene. The resulting formation of domains with different nitrogen concentrations allows obtaining n–n’ and p–n junctions in graphene. A scanning tunneling microscopy is used to measure the electronic properties of the junctions at the atomic scale and reveal their intrinsic width that is found to be ≈7 nm corresponding to a sharp junction regime.

Formation of Monolayer Charge Density Waves and Anomalous Edge Doping in Na Doped Bulk VSe2

Abstract: Alkali atom doping is an efficient way to induce charge transfer and Fermi level tuning in layered materials through intercalation. However, there is a general lack of microscopic understanding of the effect of doping inhomogeneity in geometric and electronic aspects. Here, we report surface doping of a bulk VSe2 crystal by sodium. Na atoms form intercalated subsurface islands that modify the electronic phase of the top layer of VSe2. In addition to n‐doping, the charge density wave of the intercalated VSe2 surface layer changes from the (4 × 4) bulk phase to the ( 3×7$\sqrt 3 {\bm{ \times }}\sqrt 7 $ ) known in monolayer phase of VSe2. Surprisingly, an electronic state at the edges of Na‐intercalated area shift anomalously upward in energy as detected by scanning tunneling spectroscopy. This is explained by a local gating effect resulting from local dipoles at the edges. The study illustrates a clear example of intercalation effect that should be general in alkali‐intercalated bulk layered materials.