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Amir H. Hosseinnia

Researcher at Georgia Institute of Technology

Publications -  30
Citations -  208

Amir H. Hosseinnia is an academic researcher from Georgia Institute of Technology. The author has contributed to research in topics: Photonics & Resonator. The author has an hindex of 6, co-authored 27 publications receiving 137 citations. Previous affiliations of Amir H. Hosseinnia include Sharif University of Technology.

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ITO-based microheaters for reversible multi-stage switching of phase-change materials: towards miniaturized beyond-binary reconfigurable integrated photonics.

TL;DR: In this article, a microheater platform that employs optically transparent and electrically conductive indium-tin-oxide (ITO) bridges for the fast and reversible electrical switching of the GST phase between crystalline and amorphous states is introduced.
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Resonant Light-Induced Heating in Hybrid Cavity-Coupled 2D Transition-Metal Dichalcogenides

TL;DR: In this paper, the authors investigated principal roots of heat generation in hybrid cavity-coupled few-atomic-layer-thick 2D transition-metal dichalcogenides (TMDCs) under optical pumping.
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High-quality silicon on silicon nitride integrated optical platform with an octave-spanning adiabatic interlayer coupler.

TL;DR: A wafer-scale hybrid photonic platform based on the integration of athin crystalline Si layer on top of a thin SiN layer with an ultra-thin oxide buffer layer is developed and a record-low interlayer coupling-loss of 0.02 dB is achieved at 1550 nm telecommunication wavelength window.
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ITO-Based Microheaters for Reversible Multi-Stage Switching of Phase-Change Materials: Towards Miniaturized Beyond-Binary Reconfigurable Integrated Photonics

TL;DR: This study showcases the possibility of forming a whole new class of miniaturized reconfigurable integrated nanophotonics using beyond-binary reconfiguration of optical functionalities in hybrid PCM-photonic devices.
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Compact, 15 Gb/s electro-optic modulator through carrier accumulation in a hybrid Si/SiO(2)/Si microdisk.

TL;DR: This work design and demonstrate an electro-optic modulator based on carrier accumulation on a multilayer integrated photonic platform comprising a stack of high quality Si, SiO(2), and Si layers, capable of transmitting 15 Gb/s with the on/off keying format in a single polarization.