Showing papers by "Andre K. Geim published in 1995"
198 citations
TL;DR: In this paper, the properties of the two-dimensional electron gas formed at the emitter barrier of a resonant tunnelling diode were studied in high magnetic fields, where the electrons formed quantum dots in the disordered potential due to unscreened donors in the depleted collector contact.
Abstract: Tunnelling through highly localised impurity states in the quantum well of a resonant tunnelling diode allows us to study the properties of the two-dimensional electron gas formed at the emitter barrier of the device. In high magnetic fields, the electrons form quantum dots in the disordered potential due to unscreened donors in the depleted collector contact.
5 citations
Journal Article•
1 citations
TL;DR: In this paper, mesoscopic conductance fluctuations in a GaAs quantum well with five electrically quantised two-dimensional subbands occupied were investigated and attributed to rapid electron-impurity scattering between different 2D subbands which leads to quasi-3d motion of electrons within the quantum well.
Abstract: We have investigated mesoscopic conductance fluctuations in a GaAs quantum well with five electrically quantised two-dimensional (2D) subbands occupied. The conductance fluctuations occur even in a magnetic field parallel to the plane. We attribute the fluctuations to rapid electron-impurity scattering between different 2D subbands which leads to quasi-3d motion of electrons within the quantum well. We also report for the first time, the angular correlation of the fluctuations as the magnetic field is rotated.
1 citations
01 Jan 1995
TL;DR: In this paper, the mesoscopic effects in small-area resonant tunneling devices, which are inherently non-linear conductors, exhibiting strong deviations from Ohm's Law behavior, are discussed.
Abstract: This paper describes some recent developments in our understanding of quantum transport phenomena in mesoscopic semiconducting structures. Two types of structure are considered: ultra-small wires of a degenerate semiconductor in the presence of a strong magnetic field and small-area resonant tunneling diodes. There are already some excellent review articles on universal conductance fluctuations and quantum interference effects in mesoscopic metallic and semiconducting structures in the linear transport regime. Therefore this subject is dealt with only briefly in the following section, which also highlights some recent work on the magnetoresistance of semiconducting n + GaAs wires in the high magnetic field regime. The paper then goes on to describe the manifestation of mesoscopic effects in small-area resonant tunneling devices, which are inherently non-linear conductors, exhibiting strong deviations from Ohm’s Law behavior.