An integrated electronic device having an electric connection between a first electrode of a semiconductor chip and a second electrode of a circuit board. One embodiment according to the present invention is a method for fabricating an integrated electronic device having an electric connection between a first electrode of a semiconductor chip and a second electrode of a circuit board, both surfaces of the first and second electrodes having an adhesive tendency to molten metal, the method comprising the steps of forming a metal bump on the first electrode, the metal bump being made of a soldering metal alloy consisting of a solid phase component and a liquid phase component at an operating temperature; and forming an electric connection between the first electrode and the second electrode by heating the soldering metal alloy so as to adhere to the surface of the second electrode.

Integrated electronic device having flip-chip connection with circuit board and fabrication method thereof

Disclosed herein is a process for producing a color filter substrate for picture device constructed by selectively arranging light-shielding members and a plurality of coloring members different in spectral characteristics from each other on a transparent base, which comprises the steps of forming a water-repellent layer composed of a silane coupling agent on the base on which the light-shielding members are partially formed, exposing the surface of the base to oxygen plasma, and arranging a plurality of the coloring members different in spectral characteristics from each other on transparent regions of the base.

Process for treating base to selectively impart water repellency, light-shielding member formed substrate, and production process of color filter substrate for picture device

A process is disclosed for forming an integrated circuit device, such as an EPROM device, with a floating gate electrode with a discontinuous phase of metal silicide formed on a surface thereof is described. The process for forming such a discontinuous phase of metal silicide on the surface of a polysilicon floating gate electrode for the device comprises the steps of depositing a first polysilicon layer over a substrate, and preferably over a thin oxide layer on the substrate capable of functioning as a gate oxide; then forming a very thin layer of a silicide-forming metal over the polysilicon layer; and heating the structure sufficiently to cause all of the silicide-forming metal to react with the underlying polysilicon layer to form metal silicide and to coalesce the metal silicide into a discontinuous phase on the surface of the polysilicon layer. When an EPROM device is to be constructed, the process includes the further steps of forming an first insulation layer over the structure; forming a second polysilicon layer over the first insulation layer; and then forming a second insulation layer over the second polysilicon layer. The structure is then patterned to form a dual gate electrode structure with a floating gate and a control gate. After doping of the underlying substrate to form the source and drain regions, a further oxide layer may be formed over the entire structure and contact openings may be cut to the source and drain regions and control gate electrode, thus completing formation of an EPROM device with a floating gate having a discontinuous phase of metal silicide on a surface thereof facing the control gate.

Integrated circuit structure having floating electrode with discontinuous phase of metal silicide formed on a surface thereof and process for making same

A bicycle comprises a bicycle frame and a rear wheel suspension system that is attached to the frame. The rear wheel suspension system comprises a rear wheel swingarm and a shock absorber that is coupled to the swingarm. A change in vertical wheel travel (ΔVWT) of the rear wheel is related to a change in the length of the shock absorber (ΔSL), providing a shock rate (SR). The shock rate (SR) changes throughout the vertical wheel travel of the rear wheel, such that the change in the shock rate dSR/dVWT has a change in sign as the rear wheel travels through its vertical wheel travel. In each case, the rate of change of the shock includes a change in sign, from positive to negative or from negative to positive. In some embodiments, the swingarm may be attached to the frame at a single pivot point or through a linkage system.

Bicycle rear suspension system with controlled variable shock rate

An amorphous Ni-P layer which nullifies the effects of the crystallinity of a base metal layer is formed on the base metal layer in a metallic element of a field effect transistor by electroless plating. An electrolytic Au layer is deposited on the amorphous Ni-P layer. Thus, there are no luster nonuniformities in the electrolytic Au layer, whereby the position of an electrode pad or like metallic element is easily detected mechanically and automated bonding and packaging of the field effect transistor are simplified.

Method for manufacturing semiconductor device contact

Metal patterns ( 15 ) can be provided on a glass substrate ( 1 ) in an electroless process by modifying the substrate with a silane layer ( 3 ), locally removing said layer with a laser or UV-ozone treatment and selectively nucleating the remaining silane layer in a polymer-stabilized Pd sol. Neither a photoresist nor organic solvents are used. The method is very suitable for the manufacture of the black matrix on a passive plate for an LCD, or on panels of other flat colour displays, such as flat cathode ray tubes.

Method of providing a metal pattern on glass in an electroless process

By using a nucleating solution having a low concentration of PdCl₂ at an increased temperature, contact holes can be nucleated in a selective manner and, subsequently, metallized in an electroless bath, said contact holes being etched by means of plasma etching in dielectric layers of VLSI devices having a silicon semiconductor body.

Method of manufacturing a semiconductor device using electroless metallisation

By virtue of an activating pretreatment with a polymer-stabilized Pd sol, patterns, such as transparent patterns of indium-tin oxide, can be deposited on glass by electroless metallization. For example polyvinyl alcohol is used as the polymer.

Method of selectively providing a pattern of a material other than glass on a glass substrate by electroless metallization

By using an electroless metallization bath to which a stabilizer is added which suppresses the cathodic partial reaction, pyramid-shaped bumps (53) can be grown on the bond pads of semiconductor devices without lateral overgrowth of the coating layer 3. The angle of inclination a is a function of the concentration of the stabilizer.

Method of manufacturing a semiconductor device by forming pyramid shaped bumps using a stabilizer

The invention relates to an illumination system (10,12), to a remote phosphor layer (30; 32, 34), to a scattering layer (32), to a luminaire (100), to a display device (300) and to a method of at least partially correcting a light emission characteristic of at least one light source (22) in the illumination system. The illumination system comprises an array of light sources (20) and a remote phosphor layer and/or a scattering layer arranged between the array of light sources and a light output window (40) for emitting the light from the light sources. At least one light source of the array of light sources comprises a light emission characteristic different from the other light sources of the array of light sources. The luminescent material (52, 54) is distributed across the remote phosphor layer and/or the scattering structures (52) and/or scattering material (52) are distributed across the scattering layer for compensating at least partially the difference in light emission characteristic of the at least one light source. The effect of the illumination system according to the invention is that the deviation of the at least one light source can be compensated, and as such, binning of light sources may be omitted.

Andreas Martinus Theodorus Paulus Van Der Putten

Papers

Method of providing a metal pattern on glass in an electroless process

Method of manufacturing a semiconductor device using electroless metallisation

Method of selectively providing a pattern of a material other than glass on a glass substrate by electroless metallization

Method of manufacturing a semiconductor device by forming pyramid shaped bumps using a stabilizer

Illumination system with remote phosphor layer and/or scattering layer