A
Anil Kumar
Researcher at Indian Institute of Technology Indore
Publications - 28
Citations - 614
Anil Kumar is an academic researcher from Indian Institute of Technology Indore. The author has contributed to research in topics: Band gap & Raman spectroscopy. The author has an hindex of 12, co-authored 28 publications receiving 330 citations.
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Diffuse reflectance spectroscopy: An effective tool to probe the defect states in wide band gap semiconducting materials
Vikash Mishra,M. Kamal Warshi,Aanchal Sati,Anil Kumar,Vinayak Mishra,Archna Sagdeo,Archna Sagdeo,Rajesh Kumar,Pankaj R. Sagdeo +8 more
TL;DR: In this paper, the structural properties of widely used semiconducting oxides namely; TiO2, ZnO and ZrO2 were investigated using diffuse reflectance spectroscopy (DRS).
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Strain control of Urbach energy in Cr-doped PrFeO 3
TL;DR: In this paper, the structural phase purity of polycrystalline samples of PrFe1−x and CrxO3 has been confirmed by powder X-ray diffraction followed by Rietveld refinements.
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Investigation of temperature-dependent optical properties of TiO2 using diffuse reflectance spectroscopy
Vikash Mishra,M. Kamal Warshi,Aanchal Sati,Anil Kumar,Vinayak Mishra,Rajesh Kumar,Pankaj R. Sagdeo +6 more
TL;DR: In this article, the experimental value of band gap (Eg) of polycrystalline sample TiO2, obtained from DRS, has been performed and the dependency of EU and the slope of exponential tails (β1, β2) of the density of states has also been studied which determines the distribution of exponential tail near the valence and conduction bands in semiconducting oxides.
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Strain induced disordered phonon modes in Cr doped PrFeO 3
Anil Kumar,Vikash Mishra,M. Kamal Warshi,Aanchal Sati,Archna Sagdeo,Rajesh Kumar,P. R. Sagdeo +6 more
TL;DR: A systematic correlation between crystallographic strain, Raman line width, disordered parameter (σ) and Urbach energy has been observed, which implies that structural disorder affects phononic as well as electronic states of the system.
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Doping-Induced Combined Fano and Phonon Confinement Effect in La-Doped CeO2: Raman Spectroscopy Analysis
TL;DR: The effect of La-doping on the crystallographic structure and the Raman line-shape of CeO2 has been investigated in this paper, where X-ray diffraction analysis suggests that the lattice parameter and the Ce/La-O bond are affected.