Alginates (nickel alginate, NiA; copper alginate, CuA; zinc alginate, ZnA) and 3-aminopropyltriethoxysilane (APTES) were alternately deposited on a magnesium hydroxide (MH) surface by the spray-drying-assisted layer-by-layer assembly technique, fabricating some efficient and environmentally benign flame retardants (M–FR, including Ni–FR, Cu–FR, and Zn–FR). The morphology, chemical compositions, and structures of M–FR were investigated. With 50 wt % loading, compared with EVA28+MH, the peak heat release rate, smoke production rate, and CO production rate of EVA28+Ni–FR decreased by 50.78%, 61.76%, and 66.67%, respectively. The metals or metal oxide nanoparticles arising from alginates could catalyze the pyrolysis intermediates of EVA into graphene and amorphous carbon, which could bind the inorganic compounds (the decomposition products of MH and APTES) together and form some more protective barriers. For each M–FR, the flame retardant and smoke suppression efficiency were different, which were caused by t...

Spray-Drying-Assisted Layer-by-Layer Assembly of Alginate, 3-Aminopropyltriethoxysilane, and Magnesium Hydroxide Flame Retardant and Its Catalytic Graphitization in Ethylene–Vinyl Acetate Resin

Recyclability of stainless steel (316 L) powder within the additive manufacturing process

With water as both solvent and reactant, a novel manganese(III)-mediated and -catalyzed synthesis of β-ketosulfones through decarboxylative hydroxysulfonylation reactions of arylpropiolic acids with sodium sulfinates is described. This protocol has the advantages of mild reaction conditions, short reaction time, easy to handle reagents, purification simplicity, and being environmentally benign, which demonstrate the practical utility of this methodology.

Manganese(III)-Mediated and -Catalyzed Decarboxylative Hydroxysulfonylation of Arylpropiolic Acids with Sodium Sulfinates in Water

On the use of (3-trimethoxysilylpropyl)diethylenetriamine self-assembled monolayers as seed layers for the growth of Mn based copper diffusion barrier layers

The deposition of Cu onto SiO2 has been carried out by electron beam evaporation in order to study the interface formation by X-ray photoelectron spectroscopy and angle resolved X-ray photoelectron spectroscopy. Shifts in the binding energy of Cu 2p3/2 and Si 2p bands, as well as in the Cu LMM kinetic energy, have been observed during the growth. These changes are indicative of a modification in the coordination number of Cu or the formation of M–O–M′ cross-linking bonds at the interface. Moreover, different coordination states of Cu+ and Cu2+ (tetrahedral and octahedral) have been detected. Apart from different coordination numbers, a new chemical state appears during the Cu/SiO2 interface formation. This new contribution, Cux+, is attributed to the formation of a mixed oxide Cu-O-Si. Additionally, two different stages of growth of the Cu/SiO2 interface have been observed: The first one, where no metallic Cu is detected and a mixture of copper oxides is measured onto the SiO2 substrate, and the second on...

Evidence of Mixed Oxide Formation on the Cu/SiO2 Interface

Copper/SiO2/Si metal-oxide-semiconductor (MOS) devices both with and without a MnSiO3 barrier layer at the Cu/SiO2 interface have been fabricated in an ultrahigh vacuum X-ray photoelectron spectroscopy (XPS) system, which allows interface chemical characterization of the barrier formation process to be directly correlated with electrical testing of barrier layer effectiveness. Capacitance voltage (CV) analysis, before and after tube furnace anneals of the fabricated MOS structures showed that the presence of the MnSiO3 barrier layer significantly improved electric stability of the device structures. Evidence of improved adhesion of the deposited copper layer to the MnSiO3 surface compared to the clean SiO2 surface was apparent both from tape tests and while probing the samples during electrical testing. Secondary ion mass spectroscopy (SIMS) depth profiling measurements of the MOS test structures reveal distinct differences of copper diffusion into the SiO2 dielectric layers following the thermal anneal d...

In Situ XPS Chemical Analysis of MnSiO3 Copper Diffusion Barrier Layer Formation and Simultaneous Fabrication of Metal Oxide Semiconductor Electrical Test MOS Structures.

Anita Brady

Papers

In Situ XPS Chemical Analysis of MnSiO3 Copper Diffusion Barrier Layer Formation and Simultaneous Fabrication of Metal Oxide Semiconductor Electrical Test MOS Structures.