Showing papers by "Aram Amassian published in 2004"
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TL;DR: In this article, SiCN films were fabricated by PECVD from SiH4/CH4/N2/Ar gas mixtures at a temperature of 400 °C.
147 citations
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TL;DR: In this article, the initial stages of growth of TiO2 films prepared by plasma-enhanced chemical vapor deposition on plasma pre-oxidized c-Si were investigated using in situ real-time spectroscopic ellipsometry.
45 citations