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Ashutosh C. Abhyankar

Researcher at Defence Institute of Advanced Technology

Publications -  50
Citations -  1145

Ashutosh C. Abhyankar is an academic researcher from Defence Institute of Advanced Technology. The author has contributed to research in topics: Magnetization & Thin film. The author has an hindex of 15, co-authored 47 publications receiving 778 citations. Previous affiliations of Ashutosh C. Abhyankar include Defence Metallurgical Research Laboratory & National Dong Hwa University.

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High temperature wear in CoCrFeNiCux high entropy alloys: The role of Cu

TL;DR: In this paper, a series of CoCrFeNiCux (x = 0.0, 0.2, 1.0) high entropy alloys were prepared using arc melting technique and the effect of Cu on microstructure evolution and wear was studied both at room and high temperature.
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Influence of Texture Coefficient on Surface Morphology and Sensing Properties of W-Doped Nanocrystalline Tin Oxide Thin Films

TL;DR: The gas sensing results indicate that, as compared to pure SnO2, 1 wt % W-doping improves sensitivity along with better response and recovery time toward NO2 gas at operating temperatures of ∼225 °C.
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Effect of structural defects, surface roughness on sensing properties of Al doped ZnO thin films deposited by chemical spray pyrolysis technique

TL;DR: In this article, the gas sensing properties of Al-doped ZnO thin films have been reported where the nanocrystalline znO based thin films were well deposited by a simple and inexpensive chemical spray pyrolysis (CSP) technique.
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Observation of magnetic anomalies in one-step solvothermally synthesized nickel-cobalt ferrite nanoparticles.

TL;DR: The broad inhomogeneous FMR line-width, observation of the Verwey transition, tuning of the magnetic domain structure as well as the magnetic properties suggest that the NiCoFe2O4 ferrite NPs may be promising for future generation spintronics, magneto-electronics, and ultra-high-density recording media as well for radar absorbing applications.
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Modulation of structural properties of Sn doped ZnO for UV photoconductors

TL;DR: In this paper, an optimum Sn wt.% doping level is investigated to achieve maximum photo response in terms of sensitivity, ON/OFF ratio, spectral responsivity and detectivity.