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Atsushi Hori
Researcher at Panasonic
Publications - 19
Citations - 287
Atsushi Hori is an academic researcher from Panasonic. The author has contributed to research in topics: Field-effect transistor & Gate oxide. The author has an hindex of 10, co-authored 19 publications receiving 287 citations.
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Patent
Method for making semiconductor transistor device by implanting punch through stoppers
TL;DR: In this article, a gate electrode is removed for self-alignment to selectively implant impurities only into end portions of a source region and a drain region, and the impurity concentration in the channel region is ununiform.
Patent
Nonvolatile semiconductor memory device and method for fabricating the same and semiconductor integrated circuit
TL;DR: In this article, a nonvolatile semiconductor memory device with a surface including a first surface region at a first level, a second surface region with a second level lower than the first level and a step side region linking the first surface and the second surface regions together is presented.
Patent
Method for producing a field-effect type semiconductor device
TL;DR: In this paper, a method for producing field-effect type semiconductor devices is disclosed, which includes the steps of: forming a gate insulator film on a semiconductor substrate; forming a conductor film on the gate-insulator film; and implanting impurity ions in the semiconductor substrategies through the gate and the conductor film for the purpose of controlling a threshold voltage of the device.
Patent
Field effect semiconductor device and its manufacturing method
Shuichi Kameyama,Atsushi Hori +1 more
TL;DR: In this article, a gate-drain overlap structure of excellent performance and reliability is presented for a semiconductor integrated circuit device using a field effect transistor, such as MOS, having the end part of the drain overlapped with the gate electrode.
Patent
Fabrication method for semiconductor devices
TL;DR: In this paper, a fabrication method for semiconductor devices connecting a multi-crystal semiconductor thin film and a semiconductor region including a high density of an impurity formed in a single crystal semiconductor substrate was proposed.