An outer insulation member made of a first resin packs a part of an anode terminal. The packed part of the anode terminal has a predetermined section. All surfaces of the predetermined section consist of a front surface, a back surface and edges connecting between the front surface and the back surface. The front surface includes a connection area. An anode lead wire is connected to the connection area while being not connected to the anode terminal other than the connection area. The all surfaces of the predetermined section are completely covered with a mask layer made of a second resin except for the connection area. The second resin is different from the first resin in at least one of composition thereof, content of an inclusion, size of an inclusion and shape of an inclusion.

Solid electrolytic capacitor

A solid-state electrolytic capacitor including a stacked body of a solid-state electrolytic capacitor element unit and an electrode conversion board. The unit includes two kinds of solid-state electrolytic capacitor elements. Each of first kind of solid-state electrolytic capacitor elements uses an anode body having a total thickness of an aluminum foil of 350 μm and a residual core thickness, i.e., the total thickness minus the thickness of an etched layer, is 50 μm. A second kind of solid-state electrolytic capacitor element provided on the mounting surface side uses an anode body having a total thickness of an aluminum foil of 150 μm and a residual core thickness is 50 μm. The electrode conversion board includes external anode and external cathode terminals that are arranged in a checkered manner and also includes, on the side opposite to the board, anode electrode and cathode electrode plates.

Solid-state electrolytic capacitor

The present invention provides a process for the
production of a semiconductor device comprising a semiconductor
element provided on a printed circuit board with a plurality of
connecting electrode portions provided interposed therebetween,
the gap between said printed circuit board and said
semiconductor element being sealed with an underfill resin
layer. In accordance with the present invention, (1) the
underfill resin layer is formed by melting a lamellar solid
resin provided interposed between said printed circuit board
and said semiconductor element, and (2) the lamellar solid
resin provided interposed between said printed circuit board
and said semiconductor element is heated for a predetermined
period of time until the temperature of the solid resin layer
reaches a predetermined range where the two components are
connected to each other under pressure under the following
conditions (X) and (Y):
 (X) Supposing that the initial residual heat of reaction of
the solid resin before heating is 100% as determined by a
differential scanning calorimeter (DSC), the residual heat of
reaction thereof is not more than 70% of the initial residual
heat of reaction; and (Y) The temperature of the semiconductor element is
predetermined higher than that of the printed circuit board,
and the difference in temperature between them is not less than
50°C. In this manner, a production process which facilitates the
resin sealing of the gap between the semiconductor element and
the board and thus can inhibit warpage of the entire
semiconductor device and a semiconductor device having an
excellent reliability can be provided. In the present
invention, the use of a sheet-like underfill material which
gives an underfill resin layer having an elastic modulus in
tension at 25°C of from 300 to 15,000 MPa when hardened can
provide a semiconductor device which exerts an excellent effect
of relaxing the stress on the semiconductor element, printed
circuit board and connecting electrode portions and thus
exhibits a high reliability.

Manufacture of semiconductor device

PROBLEM TO BE SOLVED: To provide a solid electrolytic capacitor capable of being manufactured small and excellent in connection between an anode wire and anode lead. SOLUTION: The solid electrolytic capacitor 1 is formed with a capacitor element C sealed inside a resin package 6 and extending an anode wire 7 from an element body 4. The capacitor 1 comprises an anode lead 3 connected to the anode wire 7, and a cathode lead 2 connected to the element body 4. The anode lead 3 and the cathode lead 2 are formed by a plate conductor and their respective bottom faces are exposed to the down face of the resin package 6 as terminals, and the element body 4 is connected to a top face 2a of the cathode lead 2 and the anode wire 7 is connected to a top face 3a of the anode lead 3 through a conductive beam member 5.

Solid electrolytic capacitor and method for manufacturing the same

PROBLEM TO BE SOLVED: To facilitate positioning of a capacitor element to a lead frame, in a chip-type solid electrolytic capacitor. SOLUTION: In this chip-type solid electrolytic capacitor 1, the capacitor element 2, from which an anode lead-out line 4 is led out and a sheath resin 3 for covering the capacitor element 2 are installed, and an anode terminal 5 and a cathode terminal 7 which are connected with the anode lead-out line 4 and a cathode layer of the capacitor element 2, respectively, are formed, in such a manner that parts of the respective terminals are exposed at least on a mounting surface of the chip-type solid electrolytic capacitor. In the capacitor, a plurality of upright parts 15, 16 which are formed, so as to rise up from opposite end portions of an anode terminal 6 are bent, a crossing part 17 is formed, and the anode lead-out line 4 of the capacitor element 1 is mounted on the crossing part 17. The crossing part 17 of the upright parts 15, 16 becomes the positioning reference of the anode lead-out line 4, so that positioning of the capacitor element 1 on a lead frame 11 is facilitated.

Azuma Masaaki

Papers

Chip type electronic part and method of fabricating same

Chip solid electrolytic condenser and method of fabricating same

Structure for removing electrode of electronic part

Method of manufacturing cylindrical electronic part

Solid electrolytic condenser