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Author

Babita Kumari

Indian Institutes of Technology
Bio: Babita Kumari is an academic researcher from Indian Institutes of Technology. The author has contributed to research in topic(s): MOSFET. The author has co-authored 1 publication(s).
Topics: MOSFET
Papers
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Proceedings Article•DOI•
Comparative Investigation of DSG-MOSFET and Some analysis on its Performance

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Babita Kumari1, Kaushik Mazumdar1, Aniruddha Ghosal2•
Indian Institutes of Technology1, University of Calcutta2
01 Mar 2019
TL;DR: In this paper, a comparative study of DSG-MOSFET and normal MOS-FET was performed and the performance was analyzed in terms of crack length and current mobility.
Abstract: AlGaN/GaN-based DSG-MOSFET is upcoming model of MOSFET. In this paper, comparative study of DSG-MOSFET $\mathrm{V}_{\mathrm{s}}$ normal MOSFET and analyzed the performance of DSG-MOSFET. The main features of it are there is negotiable barrier between source and drain so current moves more freely and current is more than normal MOSFET. As if current is more than normal MOSFET then crack length is minimum in DSG-MOSFET.