The method of the invention tracks how the collective movement of edge segments in a mask layout alters the resist image values at control points in the layout and simultaneously determines a correction amount for each edge segment in the layout. A multisolver matrix that represents the collective effect of movements of each edge segment in the mask layout is used to simultaneously determine the correction amount for each edge segment in the mask layout.

Multivariable solver for optical proximity correction

Methods, compositions and arrays for non-random loading of single analyte molecules into array structures are provided. Arrays of confined regions are produced wherein each confined region comprises a single island within the confined region. The island can be selectively functionalized with a coupling agent to couple a single molecule of interest within the confined region.

Nanoscale apertures having islands of functionality

We describe how the amorphous fluoropolymer CYTOP can be advantageously used as a waveguide cladding material in integrated optical circuits suitable for applications in integrated biophotonics. The unique refractive index of CYTOP (n = 1.34) enables the cladding material to be well index-matched to an optically probed sample solution. Furthermore, ultra-high index contrast waveguides can be fabricated, using conventional optical polymers as waveguide core materials, offering a route to large-scale integration of optical functions on a single chip. We discuss applications of this platform to evanescent-wave excitation fluorescence microscopy, passive and/or thermo-electrically-controlled on-chip light manipulation, on-chip light generation, and direct integration with microfluidic circuits through low-temperature bonding.

https://www.mdpi.com/2072-666X/3/1/114/pdf

Integrated Biophotonics with CYTOP

Advanced wafer fabs are currently fabricating devices with 90nm and 65nm design rules using 193nm lithography. To meet the challenges at these sub-wavelength technology nodes, mask designers are using a variety of resolution enhancement techniques (RETs) in lithography which require new methods of processing, inspecting and qualifying photomasks. As a result, reticle inspection tools need to be capable of detecting smaller defects on ever tighter critical dimensions and background patterns that are considerably more complicated than before. To meet the challenges of current and future technology nodes, a variety of new inspection modes have been developed on the KLA-Tencor Deep UV TeraScan reticle inspection tool. These new inspection modes include Reflected light (Die-to-Die and Die-to-Database) modes, a Transmitted light Tritone (Die-to-Database) mode for inspecting Embedded Attenuated Phase Shift Masks (EAPSMs) with chrome in the inspection area, as well as a STARlight2 (SL2) mode for contamination detection. The SL2 inspection mode is the natural successor to the STARlight contamination detection algorithm on the previous generation of KLA-Tencor reticle inspection tools. Each of the inspection modes comes with its own set of inspectability and sensitivity capabilities and therefore the selection and/or optimization of a mode can depend upon a number of factors. In this paper we will present the inspection modes that are available on the TeraScan platform and discuss the appropriate use cases for each of the modes, based on reticle type and the intended objectives of the inspection.

Optimized inspection of advanced reticles on the TeraScan reticle inspection tool

In this study, the authors propose transparent conductive oxide layer as a new absorber for extreme ultraviolet lithography mask. The optical constant of indium tin oxide (ITO) at 13.5nm is calculated and the extinction coefficient of ITO is found to be 1.55 times higher than that of TaN, resulting in higher absorption in the absorbing stack. Using an ITO layer in the absorber stack enables to design the attenuated phase-shift masks with smaller height difference of only 32.1nm than the conventional TaN absorber stack of about 80nm between high reflecting and absorbing stacks in extreme ultraviolet lithography, indicating that the geometric shadow effect can be significantly reduced.

Absorber stack with transparent conductive oxide layer for extreme ultraviolet lithography

Photomasks are defect-free optical templates -- the printing masters for the fabrication of integrated circuits (ICs). When IC feature sizes fall below the exposure tool’s source wavelength, photomask fabrication becomes difficult: very strict mask critical dimension (CD) and feature placement specifications, intensive capital equipment investment, unique raw materials and applications, and special expertise requirements for photomask fabrication technologists are necessary to fabricate modern microelectronics. Thus the rapid recent growth of the field and the need for this book. This text details the science and technology of industrial photomask production, including fundamental principles, industrial production flows, technological evolution and development, and state of the art technologies. Focusing on industrial applications rather than pure science, the goal of the book is to provide a comprehensive reference for any engineer developing microelectronic manufacturing processes 
Table of contents

Introduction
Data Preparation and Design
Pattern Generation
Pattern Transfer
Photomask Metrology
Defect Control and Finishing
Inspection, Repair, and Cleaning
Resolution Enhancement Techniques
Water Fabrication Issues
Future Developments
Appendices
References

/pdf/photomask-fabrication-technology-3sfmo6ki65.pdf

Benjamin Eynon

Papers

Photomask Fabrication Technology