Showing papers by "Benoit Deveaud published in 1979"
TL;DR: In this paper, it was shown that after thermal annealing (900 °C, 20 min) under Si3N4, Cr diffuses towards the GaAs surface leaving a Cr concentration depletion zone underneath.
Abstract: Quantitative Cr profiles have been determined on semi‐insulating GaAs by secondary‐ion mass spectrometry (CAMECA IMS 300). It is shown that after thermal annealing (900 °C, 20 min) under Si3N4, Cr diffuses towards the GaAs surface, leaving a Cr concentration depletion zone underneath. This zone becomes conductive with a carrier concentration of n∼2×1016 cm−3. Some consequences of these findings are considered.
96 citations