B
Bernard Gallois
Researcher at Stevens Institute of Technology
Publications - 54
Citations - 779
Bernard Gallois is an academic researcher from Stevens Institute of Technology. The author has contributed to research in topics: Chemical vapor deposition & Thin film. The author has an hindex of 16, co-authored 54 publications receiving 765 citations.
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High density, ultrafine precipitates in YBa2Cu3O7−x thin films prepared by plasma‐enhanced metalorganic chemical vapor deposition
TL;DR: In this article, the magnetic field dependence of the critical current density of the thin yttrium-rich YBa2Cu3O7−x with c-axis orientation prepared by plasmaenhanced metalorganic chemical vapor deposition was examined by high-resolution transmission electron microscopy.
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Tribology of diamond-like carbon sliding against itself, silicon nitride, and steel
TL;DR: In this paper, a pin-on-disk tribometer was used to measure the friction coefficient and wear rate of diamond-like carbon (DLC) films on silicon wafers and silicon nitride balls by RF plasma-assisted chemical vapor deposition at a pressure of 700 mTorr and a substrate temperature of 360 K.
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High critical current densities in YBa2Cu3O7−x thin films formed by metalorganic chemical vapor deposition at 730 °C
Y. Q. Li,J. Zhao,C. S. Chern,W. Huang,G. A. Kulesha,Ping Lu,Bernard Gallois,P. Norris,Bernard H. Kear,F. Cosandey +9 more
TL;DR: YBa2Cu3O7−x superconducting thin films with a critical current density of 2.3×106 A/cm2 at 77.7 K and 0 T were prepared by a metalorganic chemical vapor deposition process as mentioned in this paper.
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Low‐temperature in situ formation of Y‐Ba‐Cu‐O high Tc superconducting thin films by plasma‐enhanced metalorganic chemical vapor deposition
TL;DR: In this paper, high textured, highly dense, superconducting YBa2Cu3O7−x thin films with mirror-like surfaces were prepared, in situ, at a reduced substrate temperature as low as 570 °C by a remote microwave plasmaenhanced metalorganic chemical vapor deposition process (PE•MOCVD).
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Epitaxial growth of BaTiO3 thin films by plasma‐enhanced metalorganic chemical vapor deposition
C. S. Chern,J. Zhao,L. Luo,Ping Lu,Y. Q. Li,P. Norris,Bernard H. Kear,F. Cosandey,Carl J. Maggiore,Bernard Gallois,B. J. Wilkens +10 more
TL;DR: In this article, high-quality BaTiO3 thin films have been epitaxially grown on (1) LaAlO3 and (2) NdGaO3 substrates by plasmaenhanced metalorganic chemical vapor deposition at a substrate temperature of 680 °C.