scispace - formally typeset
B

Bertrand Rouet-Leduc

Researcher at Los Alamos National Laboratory

Publications -  42
Citations -  1032

Bertrand Rouet-Leduc is an academic researcher from Los Alamos National Laboratory. The author has contributed to research in topics: Slip (materials science) & Fault (geology). The author has an hindex of 12, co-authored 38 publications receiving 603 citations. Previous affiliations of Bertrand Rouet-Leduc include École Normale Supérieure & University of Cambridge.

Papers
More filters
Journal ArticleDOI

Machine Learning Predicts Laboratory Earthquakes

TL;DR: In this article, the authors apply machine learning to data sets from shear laboratory experiments, with the goal of identifying hidden signals that precede earthquakes, and infer that this signal originates from continuous grain motions of the fault gouge as the fault blocks displace.
Journal ArticleDOI

Continuous chatter of the Cascadia subduction zone revealed by machine learning

TL;DR: In this article, the authors show that the Cascadia subduction zone is apparently continuously broadcasting a low-amplitude, tremor-like signal that precisely informs of the fault displacement rate throughout the slow slip cycle.
Journal ArticleDOI

Machine Learning Predicts Laboratory Earthquakes

TL;DR: In this paper, the authors used machine learning to predict the time remaining before a laboratory fault fails with great accuracy, based on the instantaneous physical characteristics of the acoustical signal, and do not make use of its history.
Journal ArticleDOI

Similarity of fast and slow earthquakes illuminated by machine learning

TL;DR: In this article, the authors show that both slow and fast slip modes are preceded by a cascade of micro-failure events that radiate elastic energy in a manner that foretells catastrophic failure.
Journal ArticleDOI

Optimisation of GaN LEDs and the reduction of efficiency droop using active machine learning

TL;DR: This work simulates GaN-based LED structures that delay the onset of efficiency droop by spreading carrier concentrations evenly across the active region and rapidly constructs a model that predicts Poisson-Schrödinger simulations of devices, and that simultaneously produces structures with higher simulated efficiencies.