Instrumental observations1,2 and reconstructions3,4 of global and hemispheric temperature evolution reveal a pronounced warming during the past ∼150 years. One expression of this warming is the observed increase in the occurrence of heatwaves5,6. Conceptually this increase is understood as a shift of the statistical distribution towards warmer temperatures, while changes in the width of the distribution are often considered small7. Here we show that this framework fails to explain the record-breaking central European summer temperatures in 2003, although it is consistent with observations from previous years. We find that an event like that of summer 2003 is statistically extremely unlikely, even when the observed warming is taken into account. We propose that a regime with an increased variability of temperatures (in addition to increases in mean temperature) may be able to account for summer 2003. To test this proposal, we simulate possible future European climate with a regional climate model in a scenario with increased atmospheric greenhouse-gas concentrations, and find that temperature variability increases by up to 100%, with maximum changes in central and eastern Europe.

/pdf/the-role-of-increasing-temperature-variability-in-european-25imxrq3n9.pdf

The role of increasing temperature variability in European summer heatwaves

Electrically induced electron-spin polarization near the edges of a semiconductor channel was detected and imaged with the use of Kerr rotation microscopy The polarization is out-of-plane and has opposite sign for the two edges, consistent with the predictions of the spin Hall effect Measurements of unstrained gallium arsenide and strained indium gallium arsenide samples reveal that strain modifies spin accumulation at zero magnetic field A weak dependence on crystal orientation for the strained samples suggests that the mechanism is the extrinsic spin Hall effect

https://science.sciencemag.org/content/sci/306/5703/1910.full.pdf

Observation of the spin Hall effect in semiconductors.

The physics of Anderson transitions between localized and metallic phases in disordered systems is reviewed The term ``Anderson transition'' is understood in a broad sense, including both metal-insulator transitions and quantum-Hall-type transitions between phases with localized states The emphasis is put on recent developments, which include: multifractality of critical wave functions, criticality in the power-law random banded matrix model, symmetry classification of disordered electronic systems, mechanisms of criticality in quasi-one-dimensional and two-dimensional systems and survey of corresponding critical theories, network models, and random Dirac Hamiltonians Analytical approaches are complemented by advanced numerical simulations

Anderson Transitions

The robustness of edge states against external influence is a phenomenon that has been successfully applied to electron transport. A study now predicts that the same concept can also lead to improved optical devices. Topological protection might, for example, reduce the deleterious influence of disorder on coupled-resonator optical waveguides.

/pdf/robust-optical-delay-lines-with-topological-protection-2e2guxbv33.pdf

Robust optical delay lines with topological protection

http://absimage.aps.org/image/DAMOP11/MWS_DAMOP11-2011-000464.pdf

Robust optical delay lines via topological protection

A brief review is given of the present understanding of the transitions between integer quantized plateaus of the Hall conductivity in two-dimensional disordered systems in a strong magnetic field. The similarity to continuous thermodynamic phase transitions is emphasized. Results of numerical simulations for non-interacting electrons are presented and compared to experiment. The role of the Coulomb interactions at the integer quantum Hall transitions is studied.

Bodo Huckestein

Papers

Scaling theory of the integer quantum Hall effect