Modern nanotechnology allows one to scale down various important devices (sensors, chips, fibers, etc.) and thus opens up new horizons for their applications. The efficiency of most of them is based on fundamental physical phenomena, such as transport of wave excitations and resonances. Short propagation distances make phase-coherent processes of waves important. Often the scattering of waves involves propagation along different paths and, as a consequence, results in interference phenomena, where constructive interference corresponds to resonant enhancement and destructive interference to resonant suppression of the transmission. Recently, a variety of experimental and theoretical work has revealed such patterns in different physical settings. The purpose of this review is to relate resonant scattering to Fano resonances, known from atomic physics. One of the main features of the Fano resonance is its asymmetric line profile. The asymmetry originates from a close coexistence of resonant transmission and resonant reflection and can be reduced to the interaction of a discrete (localized) state with a continuum of propagation modes. The basic concepts of Fano resonances are introduced, their geometrical and/or dynamical origin are explained, and theoretical and experimental studies of light propagation in photonic devices, charge transport through quantum dots, plasmon scattering in Josephson-junction networks, and matter-wave scattering in ultracold atom systems, among others are reviewed.

/pdf/fano-resonances-in-nanoscale-structures-2c8qeas3bm.pdf

Fano resonances in nanoscale structures

http://ltl.tkk.fi/ice/Kevo/noisereview.pdf

Shot noise in mesoscopic conductors

Journal of Physics A - Mathematical and General, Special Issue. SI Aug 11 2006 ?? Preface

Application of the field-effect transistor principle to novel materials to achieve electrostatic doping is a relatively new research area. It may provide the opportunity to bring about modifications of the electronic and magnetic properties of materials through controlled and reversible changes of the carrier concentration without modifying the level of disorder, as occurs when chemical composition is altered. As well as providing a basis for new devices, electrostatic doping can in principle serve as a tool for studying quantum critical behavior, by permitting the ground state of a system to be tuned in a controlled fashion. In this paper progress in electrostatic doping of a number of materials systems is reviewed. These include structures containing complex oxides, such as cuprate superconductors and colossal magnetoresistive compounds, organic semiconductors, in the form of both single crystals and thin films, inorganic layered compounds, single molecules, and magnetic semiconductors. Recent progress in the field is discussed, including enabling experiments and technologies, open scientific issues and challenges, and future research opportunities. For many of the materials considered, some of the results can be anticipated by combining knowledge of macroscopic or bulk properties and the understanding of the field-effect configuration developed during the course of the evolution of conventional microelectronics. However, because electrostatic doping is an interfacial phenomenon, which is largely an unexplored field, real progress will depend on the development of a better understanding of lattice distortion and charge transfer at interfaces in these systems.

/pdf/electrostatic-modification-of-novel-materials-344hnnvrgv.pdf

Electrostatic modification of novel materials

TOPICAL REVIEW: Organic spintronics

Electronic transport through a quantum dot strongly coupled to electrodes is studied within a model with two conduction channels. It is shown that multiple scattering and interference of transmitted waves through both channels lead to Fano resonance associated with Kondo resonance. Interference effects are also pronouncedly seen in transport through the Aharonov-Bohm ring with the Kondo dot, where the current characteristics continuously evolve with the magnetic flux.

https://arxiv.org/pdf/cond-mat/0104217.pdf

Fano and Kondo resonance in electronic current through nanodevices.

Current and its noise in a ferromagnetic double tunnel barrier device with a small spacer particle were studied in the framework of the sequential tunneling approach. Analytical formulas were derived for electron tunneling through the spacer particle containing only a single energy level. It was shown that Coulomb interactions of electrons with a different spin orientation lead to an increase of the tunnel magnetoresistance. Interactions can also be responsible for the negative differential resistance. A current noise study showed which relaxation processes can enhance or reduce fluctuations leading either to a super-Poissonian or a sub-Poissonian shot noise.

https://arxiv.org/pdf/cond-mat/0003418.pdf

Current and power spectrum in a magnetic tunnel device with an atomic-size spacer

We consider a coherent electronic transport between two ferromagnetic electrodes separated either by a metallic nanoparticle or by a conducting molecule. Correlations between electrons with opposite spins lead to the Kondo resonance, which manifests a formation of the singlet state. Although tunneling rates for electrons with opposite spin orientations are different, the conductance reaches the unitary limit in the Kondo regime. We predict a negative magnetoresistance effect, which can be observed for asymmetric magnetic junctions.

/pdf/coherent-electronic-transport-and-kondo-resonance-in-1cjt5typya.pdf

Coherent electronic transport and Kondo resonance in magnetic nanostructures

Electron tunneling in ferromagnetic single-electron transistors is considered theoretically in the sequential tunneling regime. A formalism is developed, which operates in a two-dimensional space of states, instead of one-dimensional space used in the spinless case. It is shown that spin fluctuations can be significantly larger than the charge fluctuations. The influence of discrete energy spectrum of a small central electrode on tunneling current, charge and spin accumulation, charge and spin fluctuations, and on tunnel magnetoresistance is analyzed in detail. Two different scales are found in the bias dependence of the basic transport characteristics; the shorter one originates from the discrete energy spectrum and the longer one from discrete charging of the central electrode. The features due to discrete spectrum and discrete charging disappear at high temperatures.

Spin effects in ferromagnetic single-electron transistors

The phase diagrams and superconducting properties of the extended Hubbard model with pair hopping interaction, i.e. the Penson-Kolb-Hubbard model are studied. The analysis of the model is performed for d-dimensional hypercubic lattices, including d=1 and d=$\infty$, by means of the (broken symmetry) Hartree-Fock approximations and, for d=$\infty$, by the slave-boson mean-field method. For d=1, at half-filling the phase diagram is shown to consist of nine different phases including two superconducting states with center-of-mass momentum q=0 and q=Q ($\eta$-pairing), site and bond-located antiferromagnetic and charge-density wave states as well as three mixed phases with coexisting site and bond orderings. The stability range of the bond-type orderings is shrank with increasing lattice dimensionality d and for d=$\infty$ the corresponding diagram consists of four phases only, involving exclusively site-located orderings. Comparing the pair hopping model with the attractive Hubbard model we found in the both cases gradual evolution from the BCS-like limit to the tightly bound pairs regime and a monotonic increase of the gap in the excitation spectrum with increasing coupling. However, the dynamics of electron pairs in both models is qualitatively different, which results in different dependences of condensation energies and critical temperatures on interaction parameters as well as in different electrodynamic properties, especially in a strong coupling regime.

https://arxiv.org/pdf/cond-mat/9806088.pdf

Bogdan R. Bułka

Papers

Fano and Kondo resonance in electronic current through nanodevices.

Current and power spectrum in a magnetic tunnel device with an atomic-size spacer

Coherent electronic transport and Kondo resonance in magnetic nanostructures

Spin effects in ferromagnetic single-electron transistors

Superconductivity in the Hubbard model with pair hopping