The influence of the inorganic/organic interfacial layer on the electric and dielectric performance of both Al/p-Si (MS) and Al/(Bi2Te3– Bi2O3– TeO2– PVP)/p-Si (MPS) type SBDs have been investigated. The material for the interfacial layer has been synthesized by the ultrasound-assisted method. FE-SEM, XRD, EDS, and UV–Vis techniques have been used for structural and optical characteristics of the prepared sample. The main electrical, dielectric, and electrical modulus parameters of these SBDs were obtained from the I–V and impedance spectroscopy measurements and using different calculation methods. The surface states (Nss) have been calculated. The real and imaginary components of the permittivity (e* = e′-je"), complex modulus (M* = M’+jM’‘), dielectric loss tangent, and conductivity (σac) values were also calculated from the (C/G-f) measurements in the wide range of frequency(100Hz-1MHz). We observed that (Bi2Te3–Bi2O3-TeO2-PVP) interlayer may be a good alternative to the low-dielectric insulator prepared by traditional methods.

The effects of (Bi2Te3–Bi2O3-TeO2-PVP) interfacial film on the dielectric and electrical features of Al/p-Si (MS) Schottky barrier diodes (SBDs)

The admittance measurements of the fabricated Au/(%1Ni-PVA)/n-Si (MPS) structure were performed within the frequency range of 5 kHz-5 MHz and voltage range of ±3 V with 50 mV steps. C and G values were found to be strong functions of frequency & voltage. These parameters took high values at lower-frequencies and it was associated with the surface-states (Nss) located at Au/(%1Ni-PVA) interface and surface/dipole polarization. The existence of Nss also led to other effects such as peak behavior at distinct voltages for the plot of Gp/ω-log(f). Corrected values of the measured C and G were obtained by eliminating the effects of series resistance (RS) on them. As a result of this correction, the corrected value of C increases with increasing voltage at accumulation region whereas Gc decreases and shows a distinctive peak. The basic electrical parameters calculated from the reverse bias C−2-V plots were also found to be strong functions of frequency and frequency-dependent coefficient of ΦB was found as 14.1 × 10−3eV. Obtained low values of Nss (≈1012 eV−1 cm−2) were attributed to the passivation effects of (%1Ni-PVA) interlayer and hence it can be successfully used as interlayer material that is alternative to the conventional oxides regarding the enhancements in device parameters.

Electrical parameters of Au/(%1Ni-PVA)/n-Si (MPS) structure: Surface states and their lifetimes

A thin (NiS-doped PVP) interface layer was spin-coated on n-Si substrate, and between Au contact were prepared on the surface by the sputtering method and then their basic electrical features, for example, diffusion-potential (VD), doping density of donor-atoms (ND), Fermi-energy (EF), barrier-height (ΦB), and depletion layer-width (WD) were extracted reverse-bias C−2-V plots as function frequency and voltage. The voltage profile of interface/surface-states (Nss)/ relaxation-times (τ), and series resistance (Rs) were also obtained from the admittance and Nicollian-Brews method, respectively. Strongly frequency-dependent and voltage, especially in both accumulation and depletion regions due to the existence of Nss, Rs, and polarization as well as (NiS-doped PVP) organic interlayer. At low frequency, the observed higher value of C and G shows that thin (NiS:PVP) interlayer can be successfully used to obtain high charges/energy storage (MPS) structure/capacitor instead of conventional insulator layer performed traditional methods. As a result, the observed important changes in electrical parameters with frequency and voltage depend on Nss, their τ, Rs, organic interlayer and interfacial or dipole polarization.

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Frequency and voltage-dependent electrical parameters, interface traps, and series resistance profile of Au/(NiS:PVP)/n-Si structures

Discrepancies in barrier heights obtained from current–voltage (IV) and capacitance–voltage (CV) of Au/PNoMPhPPy/n-GaAs structures in wide range of temperature

To determine which of graphene (Gr) doping ratio (pure, 3–5%) into PVA is better or not, Gr-based PVA organic thin film were grown between Al/p-Si by using electro-spinning technique in same condition. For this purpose, both the voltage-dependent C and G/ω data were obtained at enough low and high two different frequencies (1 kHz and 500 kHz) for three different structures. Using the slope and intercept of C−2–V data, the electronic parameters [the doping-concentration atoms (NA), the Fermi energy level (EF), depletion layer width (Wd), and barrier-height (ΦB)] of the structures were calculated. The voltage-dependent profiles of interface-traps (Dit) and series resistance (Rs) were also extracted from the High–Low frequency capacitance and Nicollian–Brews method, respectively. Due to a special-distribution of Dit in the band gap of Si, the Dit–V plot for 5% Gr-doped PVA structure shows two distinctive peak as 8.60 × 1013 eV−1 cm−2 at − 3.95 V and 9.70 × 1012 eV−1 cm−2 at − 1.10 V, respectively. When these results were compared with each other; the Wd, EF, and Dit values decrease with increasing rate of Gr-doped into PVA, whereas the BH increases. All results show that the best doping rate of Gr in to PVA is 5% and also (Gr:PVA) organic thin film should be successfully preferred instead of conventional insulators due to low cost/weight-Dit, high-BH, and easy production technique.

Influence of graphene doping rate in PVA organic thin film on the performance of Al/p-Si structure

The surface states (Nss), relaxation time (τ), and series resistance (Rs) values as a function of frequency for various bias voltage of the metal-insulator-semiconductor (MIS) structure were obtained by using the impedance measurements which is including capacitance (C) and conductance (G/ω) in the frequency range of 05–500 kHz at room temperature C/G-V plots for each frequency have inversion-depletion-accumulation regions and show a strong frequency and voltage-dependent at low-moderate frequencies due to the existence of Nss, Rs and Zinc Oxide (ZnO) interlayer The parallel conductance (Gp/ω) between −2 and 15 V shows a distinctive peak for almost every voltage and its position shifts to higher frequencies with increasing voltage The values barrier height (ФB), concentration of donor atoms (ND), and depletion layer thickness (WD) were calculated from the slope and intercept C−2-V plots as function of frequency On the other hand, ideality factor (n), barrier-height (ΦBo) and Rs of the structure were calculated from both the thermionic-emission (TE) and Cheung functions which are usually good consisted with each other, some little discrepancies in them were attributed to the voltage-dependent of them and the nature of the used technique

On the frequency and voltage-dependent main electrical parameters of the Au/ZnO/n-GaAs structures at room temperature by using various methods

A comparison electric-dielectric features of Al/p-Si (MS) and Al/ (Al2O3:PVP)/p-Si (MPS) structures using voltage–current (V–I) and frequency–impedance (f–Z) measurements

The objective of this study is to investigate the effect of (Al 2 O 3- PVP) on the electrical characteristics in Al/p-Si (MS) and Al/(Al 2 O 3 -PVP)/p-Si (MPS) structures. At the first stage of this study, the preparation mechanism of A 2 O 3 nanostructures and its structural and morphological properties have been reported. Finally, the fabricated Schottky structures on the base of (Al 2 O 3 -PVP) nanocomposites have been reported. The forward and reverse bias I-V measurements at room temperature were also have been investigated and compared with each other to see the effect of organic interfacial layer on the main electrical characteristics.

Utilization of Al 2 O 3 /PVP nanocomposite as an interfacial layer for Schottky structures

On the Negative Capacitance of the Au/ZnO/n-GaAs Structures in the Capacitance–Voltage Plots at the Accumulation Zone for High Frequencies

In this study, an application-oriented approach was made by utilizing the absorptive properties of thin, periodic metal-dielectric multilayer materials based on their effective metamorphic properties and resonant response mechanism. Based on this mechanism, versatile, thin, polarization-independent, highly efficient ITO/Al 2 O 3 /ZnS/Al structure in a frequency range from UV to IR was designed, manufactured and tested. Thermally evaporated ITO thin films have been used as the substrate for the detector. For the preparation of sapphire nanostructures, first sapphire Nanopowders have been synthesized by sol-gel method and then the prepared powder annealed at 1200°C. The optical properties of the prepared materials used in the structure and the prepared thin films were defined by UV-Vis spectroscopy and a comparative investigation have been done. Also, the surface morphology, elemental analysis and structural properties of the materials used for fabrication of ITO/Sapphire/ZnS/Al superlattice have been investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD), and energy dispersed X-ray (EDX). In the next step, sapphire nanostructures in the thin film form have been coated on ITO substrate using a simple casting method. A drop of an aqueous solution of Al 2 O 3 nanostructures was dispersed on the substrate, and the product was kept to form a thin film of the nanostructure after evaporation of water from the surface of the substrate a drop of sonochemically prepared ZnS nanostructure was dispersed using the same method. For the preparation of aqueous Al 2 O 3 and ZnS dispersion, 0.01 of each material in powder form dispersed in distilled water in order to provide well-dispersed material, the solution was kept under the ultrasonic bath.

Buket Akin

Papers

On the frequency and voltage-dependent main electrical parameters of the Au/ZnO/n-GaAs structures at room temperature by using various methods

A comparison electric-dielectric features of Al/p-Si (MS) and Al/ (Al2O3:PVP)/p-Si (MPS) structures using voltage–current (V–I) and frequency–impedance (f–Z) measurements

Utilization of Al 2 O 3 /PVP nanocomposite as an interfacial layer for Schottky structures

On the Negative Capacitance of the Au/ZnO/n-GaAs Structures in the Capacitance–Voltage Plots at the Accumulation Zone for High Frequencies

Morphological and Structural Properties of Metamaterial Based on ITO/Sapphire/ZnS/Al Superlattice