C. Polop

TL;DR: The growth of Ag thin films deposited at 300?K on amorphised Si surfaces under ultra high vacuum conditions is investigated by in situ scanning tunnelling microscopy in this paper, where the analysis of film morphology as a function of film thickness together with additional annealing experiments allow a quite complete picture of the film formation processes to be obtained.

TL;DR: An atomistic model of stacking-fault formation is proposed that accurately describes the results for Ir(111) and is expected to be valid also for other surfaces.

TL;DR: Simulation results provide key findings concerning the interplay between anisotropic grain interactions at complementary space scales, deposition conditions (such as flux and mobility), and mechanisms of stress accommodation-relaxation, which underlies the origin, nature and spatial distribution.

TL;DR: In this paper, the reversibility of the coordination bonds is exploited to allow the polymers to be sublimated in form of small oligomers and reassembled on the surface, and a temperature-controlled transition to a 1D organization refl ecting the 1D bulk structure is observed by atomic force microscopy.

TL;DR: A simple model is developed allowing us to determine separately the constant sputtering yields for terraces and for impact area stripes in front of ascending steps--the step-edge sputtering yield--is in excellent agreement with the molecular dynamics simulations performed for the experimental situation.